Allicdata Part #: | PDTB113ES,126-ND |
Manufacturer Part#: |
PDTB113ES,126 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS PREBIAS PNP 500MW TO92-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTB113ES,126 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 1 kOhms |
Resistor - Emitter Base (R2): | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 500mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | PDTB113 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Bipolar junction transistors (BJT) have been in use for over half a century and have become the workhorse of the electronic world. They are small yet powerful, versatile, reliable and cheap. They are, however, only by themselves capable of limited applications when configured as a single device. The introduction of PDTB113ES and PDTB126 transistors provide a powerful alternative to conventional BJT configurations.
The PDTB113ES and PDTB126 transistors are pre-biased, single device solutions which represent a major breakthrough in BJT technology. The pre-bias technique used in these transistors allows them to work over a wide range of temperature and operating voltage, while also providing low power dissipation. This makes them ideal for many popular applications including automotive, industrial, medical and consumer electronics.
The advantages of PDTB113ES and PDTB126 transistors over conventional BJT solutions include their tiny size, low cost, better thermal stability and low power consumption. Their small size and low cost allow them to be used in a variety of applications which require space saving. They also have excellent thermal stability and durability which make them extremely reliable in high temperature or harsh environments. Furthermore, due to their low power consumption, they can be applied in applications which require very low energy consumption.
The main operating principle of the PDTB113ES and PDTB126 transistors is dependent upon their pre-bias design. This design consists of two transistors which are connected in anti-parallel that are already biased at their respective voltages. The pre-biased transistors are then connected to an input voltage and when input is applied to the two transistors, they work together in a complementary manner to switch and amplify the input signal.
An important feature that is unique to PDTB113ES and PDTB126 transistors is the self-biasing circuit which enables the device to automatically adjust the bias voltage. This helps to ensure reliable operation in varying temperature and voltage conditions as the bias voltage is constantly tuned to the environment. The self-biasing circuit also allows the device to be used in a wide range of application including low level switching, audio amplification and motor driver applications.
The PDTB113ES and PDTB126 single-device, pre-biased transistors offer advanced capabilities and performance at an economical cost. With their excellent thermal stability and low power dissipation, they can be used in many applications that require small size, cost-effectiveness and versatility. In addition, their self-biasing architecture enables them to easily adapt to a variety of environmental conditions, allowing them to be used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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