Allicdata Part #: | 1727-8163-2-ND |
Manufacturer Part#: |
PDTB114ETR |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 0.46W |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | PDTB114ETR Datasheet/PDF |
Quantity: | 999 |
3000 +: | $ 0.04549 |
6000 +: | $ 0.03956 |
15000 +: | $ 0.03362 |
30000 +: | $ 0.03164 |
75000 +: | $ 0.02967 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 140MHz |
Power - Max: | 320mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
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PDTB114ETR single pre-biased transistors are widely used in many different applications. In particular, they are popular in radios, amplifiers, TVs, and other audio-visual applications. The PDTB114ETR transistor is a relatively newer type of transistor, which offers higher performance and reliability compared to traditional BJT devices.
The PDTB114ETR integrated pre-biased transistors consist of two dissimilar transistors, the NPN and PNP, bonded into a single two-terminal device. It is specifically designed for operation in the VHF and UHF frequency bands, where smaller size and faster switching speeds are important.
This type of device is especially suitable for applications requiring high speed response times, such as applications in the RF area, cellular communications and base station applications, power supply, amplifier and even microprocessor circuits. The integrated pre-biased feature allows the device to operate in both the positive DC biasing and AC circuits, while providing the advantages of low temperature coefficient and low leakage current. Additionally, the device has a low on-state volt drop and a low distortion level.
The basic working principle of the PDTB114ETR revolves around the use of a specially designed NPN transistor that acts as a switch. When the transistor\'s base-emitter junction is forward biased with a positive voltage, it draws current from the NPN drain and its source. This causes the PNP transistor to turn on and its collector-emitter junction will draw current from the output. As a result, the output is a regulated current flow.
For highly demanding applications, the PDTB114ETR is also capable of achieving ultra-high speed switching speeds, thanks to its high gain-bandwidth product. The device has an especially low response time in comparison to other transistors of the same kind, making it ideal for applications that need a fast response time. Additionally, the device features a low on-resistance, allowing minimal power loss and dissipation.
In addition to its superb performance, the PDTB114ETR also offers great reliability. Its high-temperature-resistant design helps to ensure the device\'s long-term stability, while its low distortion level assists in reducing signal noise and distortion. This device is also of great benefit to applications that need high stability, such as in radio frequency applications. Additionally, the device is suitable for operation even in extreme temperature conditions.
The PDTB114ETR is an extremely useful device that can be implemented in many applications. It offers higher performance, reliability, and stability than traditional transistors, making it a great choice for more demanding applications. Furthermore, the integrated pre-biased feature of the PDTB114ETR makes it much easier to work with, eliminating the need for a complex biasing network.
The specific data is subject to PDF, and the above content is for reference
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