PDTB123YT,215 Allicdata Electronics
Allicdata Part #:

1727-1703-2-ND

Manufacturer Part#:

PDTB123YT,215

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 250MW TO236AB
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTB123YT,215 datasheetPDTB123YT,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03575
6000 +: $ 0.03109
15000 +: $ 0.02643
30000 +: $ 0.02487
75000 +: $ 0.02332
150000 +: $ 0.02073
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: PDTB123
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com


When it comes to reliable and high-quality transistors, one of the most popular choice is PDTB123YT, 215. This single, pre-biased microtransistor is perfect for a variety of applications, with its flexibility and excellent performance. This article will provide an overview of the application fields and working principles of the PDTB123YT, 215 microtransistor.

The PDTB123YT, 215 is capable of providing current gain from 20 to 400 and can sustain nearly 600 voltages. This makes it a great choice for circuits that require high-performance switching, such as power supplies, motor controllers, and amplifiers. This microtransistor also provides resistive feedback for voltage regulation, helping keep circuits accurate and stable.

The pre-biased nature of the PDTB123YT, 215 is key to its success. The pre-biased nature reduces the amount of external circuitry needed to bias the microtransistor. This helps reduce design time and the cost of implementation, while also delivering reliable performance.

PDTB123YT, 215’s pre-biased design also simplifies driving the gate voltage required to turn the transistor on and off. This allows designers to simplify the interface between the gate and the microtransistor, reducing the risk of error and increasing the possibility of a successful design.

PDTB123YT, 215 also features high leakage current which is important for proper gate switching. Low leakage currents decrease the power stored in the gate and reduce logic power spikes often caused by excessive current in the gate. This helps reduce power consumption and reduce the risk of damaged components.

Finally, the PDTB123YT, 215 has an integrated electrostatic discharger (ESD) which helps protect the transistor from any sudden voltage surges. This reduces the risk of damage due to ESD, allowing the circuit to remain reliable and operational.

In conclusion, the PDTB123YT, 215 is an excellent choice for applications where high-performance switching is required. Its pre-biased design simplifies driving the gate voltage and reduces design time and costs. The integrated electrostatic discharger provides added protection against sudden voltage surges, and the low leakage current ensures proper gate switching. All of these features allow for reliable and accurate performance for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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