PDTB143EUF Allicdata Electronics
Allicdata Part #:

PDTB143EUF-ND

Manufacturer Part#:

PDTB143EUF

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 0.425W
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTB143EUF datasheetPDTB143EUF Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03387
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 140MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Description

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Transistors are commonly used in a range of applications, from signal processing to controlling current flow. PDTB143EUF is a single, pre-biased bipolar junction transistor (BJT) designed to meet these needs. The device is widely used for general purpose switching and amplifying applications. This article will explain the applications of this transistor, as well as its working principles.

PDTB143EUF is a small-signal BJT which is ideally suited for use in amplifying and switching applications. Its characteristics include a high gain up to 30mV/V, low noise figures and ample maximum power dissipation enabling it to deliver up to 500mA of continuous current. Additionally, its low collector-emitter saturation voltage makes this transistor well suited to use in switching and amplifying applications where low voltage switches are often used.

PDTB143EUF is a great choice for applications ranging from linear amplification to high-frequency switching. This device is often used to amplify signals in audio applications, amplify AC signals, and give gain to power supply voltages. It is also used in switched-mode power supplies, where it is used to switch the power supply between states.

To understand how this device works, it is first important to understand the important components of a BJT. A BJT consists of three leads, a collector, an emitter, and a base. The collector and emitter are terminals which allow current to flow, while the base is a control terminal which adjusts the flow of current between the other two terminals. When a current is applied to the base, it causes the transistor’s resistance at the collector to decrease, allowing current to flow from the collector to the emitter. This is the basis of how a BJT amplifies a signal.

The PDTB143EUF is a pre-biased transistor, meaning that it comes with a base-emitter bias voltage of 1.75volts. This bias voltage is necessary in order to ensure the transistor is biased correctly so that it is able to properly amplify a signal. This means that when a current is applied to the base, the transistor is able to achieve its maximum gain with the minimum amount of input current.

This transistor is also a single-ended transistor, meaning that it has only one collector and one emitter. This allows for improved linearity and higher output power as compared to multi-emitter transistors. This makes it ideal for use in linear amplifiers, particularly in audio applications where high fidelity audio is desired.

The PDTB143EUF is a versatile and useful BJT, thanks mainly to its wide range of applications and its pre-biased design. Its high gain and efficient power dissipation mean that it can be used in a variety of different applications, and its single-ended design allows it to be used in more specialized applications requiring more precise control and linearity. Whether it is used for amplifying audio signals or for power-supply-switching applications, the PDTB143EUF is sure to meet all of your needs.

The specific data is subject to PDF, and the above content is for reference

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