PDTB123YUX Allicdata Electronics
Allicdata Part #:

PDTB123YUX-ND

Manufacturer Part#:

PDTB123YUX

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 0.425W
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTB123YUX datasheetPDTB123YUX Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04234
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 140MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Description

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Bipolar junction transistors (BJTs) are a type of transistor which consists of three terminals (or layers), namely, the “collector”, “base” and “emitter”. The base terminal is where current is controlled by the application of a bias voltage, the voltage applied to the collector creates an electric current flow between the “collector” and “emitter”. This current flow can be used to produce various output effects. The PDTB123YUX is an example of a single pre-biased BJT, which can be used for many applications.

So what are the features of the PDTB123YUX, and how can it be used in different applications? The PDTB123YUX is a single, pre-biased bipolar junction transistor. Its collectors and emitter levels have been predefined and fixed, with a pre-biased voltage of 5V and a pre-biased current of 0.5mA. This makes it very suitable for applications with limited space constraints, since the external bias voltage and current need not be adjusted. Additionally, the PDTB123YUX offers low thermal drift, good gain linearity, low saturation voltage and sufficient ruggedness to withstand harsh environments, making it ideal for many applications.

Now let’s turn to its working principle. As previously mentioned, the PDTB123YUX operates as a bipolar junction transistor, which acts as a current amplification device. The current in the collector-emitter path is controlled through the base-emitter voltage, which is determined by an external bias voltage applied to the base. When the collector-emitter voltage is lower than the base-emitter voltage, the collector current increases, amplifying the signal. Reversely, when the collector-emitter voltage is higher than the base-emitter voltage, the collector current decreases, dampening the signal.

The main applications of the PDTB123YUX are analog signal processing and power switching. In terms of analog signal processing, it can be used as a differential amplifier to amplify and modulate the signal. In the power switching application, it can be used as a switch to control the flow of current in a circuit. In both cases, the device’s low saturation voltage, high current gain and low thermal drift make it a perfect choice.

Therefore, the PDTB123YUX is a single pre-biased BJT transistor, which has several advantages such as low bias voltage, thermal drift and saturation voltage. Its working principle is based on the basic principle of a bipolar junction transistor, and it is used in various applications such as analog signal processing and power switching. In these applications, its low thermal drift and good gain linearity make it a perfect choice.

The specific data is subject to PDF, and the above content is for reference

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