Allicdata Part #: | PDTB143XUF-ND |
Manufacturer Part#: |
PDTB143XUF |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS PNP 0.425W |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTB143XUF Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03387 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 140MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
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PDTB143XUF is a type of pre-biased single bipolar junction transistor (BJT) that is widely used in communication, automotive, industrial and home applications. It has low collector-to-emitter breakdown voltage and low saturation voltage. This makes it ideal for high voltage and current applications. The PDTB143XUF is designed to provide a high level of reliability and outstanding long-term performance in a wide variety of electronic products.
The PDTB143XUF has a base-emitter breakdown voltage of 40V and collector-emitter breakdown voltage of 80V. It has a current gain of 150 and a total power dissipation of 4W. It also has a high gain bandwidth product of 3MHz. The package size is small, making this transistor suitable for use in low volume applications.
The PDTB143XUF has a variety of application fields, including radio frequency (RF) amplifiers, audio amplifiers, class-A and class-B amplifiers, communication systems and home electronic devices. It can also be used in motor control systems, voltage regulators, switching regulators and power inverters. It is also widely used in heavy-duty equipment such as switchgear, power systems and motor drives.
The working principle of the PDTB143XUF is based on the principle that current flows through the transistor\'s collector-emitter junction when the base voltage is higher than the forward bias voltage. When the base voltage is lower than the reverse bias voltage, current does not flow through the transistor. The current gain of the transistor is proportional to the ratio of the collector current to the base current.
The PDTB143XUF transistor is designed to be pre-biased, meaning that a fixed current is passed through the base-emitter junction before the external voltage is applied. Pre-biasing improves the transistor\'s performance and increases its efficiency. It also reduces switching losses, allowing the device to operate at higher frequencies.
The PDTB143XUF is a popular device due to its high performance, low cost and small size. It is highly reliable and provides excellent long-term performance in a wide variety of electronic applications. It is a cost-effective and efficient solution for many types of power supply and motor control designs.
The specific data is subject to PDF, and the above content is for reference
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