PDTB143XUX Allicdata Electronics
Allicdata Part #:

PDTB143XUX-ND

Manufacturer Part#:

PDTB143XUX

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS PNP 0.425W
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTB143XUX datasheetPDTB143XUX Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04234
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 140MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Description

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PDTB143XUX application field and working principle

PDTB143XUX is a high performance single, pre-biased bipolar transistor (BJT) from STMicroelectronics, which provides a high immunity to abruptly switching environments. It can be used in both positive and negative polarities. It features a low voltage base-emitter resistance, high gain bandwidth ratio, and fast switching times. It can be used in a wide variety of applications, such as high frequency switching, RF amplifiers, and linear amplifiers.

The PDTB143XUX is constructed using the standard components of a BJT transistor. It consists of an emitter, a base, and a collector. The base and collector are connected together, forming a single layer structure. The base is connected to the negative power supply voltage and the emitter is connected to a positive power supply voltage. The PDTB143XUX also features a built-in bias resistor, which helps to ensure a stable working current for the device. By adjusting the base-emitter resistance, the operating current can be adjusted for various applications.

The PDTB143XUX’s collector-emitter voltage is controlled by the base-emitter voltage. When a positive voltage is applied to the base, the collector current increases and the collector-emitter voltage will decrease, while the opposite effect occurs with a negative base voltage. The PDTB143XUX is particularly useful for high frequency switching applications, due to its high gain bandwidth ratio, fast switching times, and low noise level.

The PDTB143XUX is suitable for applications that require reliable and consistent operation in both digital and analog domains. Its fast switching times and high gain bandwidth ratio make it ideal for high-frequency switching regimes. Additionally, its low voltage base-emitter resistance and bias resistor help to ensure a stable working current for the device.

The PDTB143XUX is an excellent choice for medium power applications due to its high immunity to abruptly switching environments and fast switching times. It is also suitable for low noise and low power applications, such as linear amplifiers and RF amplifiers. Overall, the PDTB143XUX is a versatile, reliable, and cost-effective choice for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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