PDTB114ETVL

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	140MHz
Power - Max:	320mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)

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<p>PDTB114ETVL is a single pre-biased bipolar junction transistor (BJT), specifically designed for automotive applications. It is a high-reliability semiconductor device with improved avalanche energy durability for special usage in amplifier, power transistor and Darlington circuits. It has a maximum collector-emitter voltage of 40V, maximum collector current of 3A, limited power dissipation of 94W and maximum gain of 1000. The PDTB114ETVL also features a low saturation voltage, a wide gain bandwidth product, a low common-mode input offset voltage and an improved power output capability.</p> <p>The PDTB114ETVL is well suited for a variety of automotive applications, including ECM and PWMs for auxiliary systems, engine controllers and airbag controllers for safety systems, fuel injection, cornering lights and high-speed data conversion circuits. It is well suited for switching in high-speed MOSFETs and in power applications, as well as for driving current-regulating power switches. The high current gain and low saturation voltage enable the PDTB114ETVL to deliver high power output at greatly reduced cost.</p><p>The working principle of PDTB114ETVL is based on the bipolar junction transistor (BJT), which is a three-terminal semiconductor device consisting of two pn-junction transistors connected in series. It is formed by the combination of two p-type and n-type semiconductor materials, arranged in either a vertical or lateral design. The working or operation of such transistor is based on the basic principle of biasing, which is that one-half of the transistor is forwardbiased while the other one is reverse-biased. This causes electrons to flow from one end of the transistor to the other.</p><p>The forward bias of the PDTB114ETVL transistor improves its performance, as it increases its current conduction capabilities. The alternating current flows from the Collector to the Emitter of the transistor in a forward-biased state, which then induces a current in the Base – Collector loop. Once the Base – Collector junction is DC biased, the De saturation voltage occurs, which is the voltage across the Base – Emitter terminals when current is no longer flowing from the Collector to the Emitter.</p><p>The PDTB114ETVL works by providing a low saturation voltage across the Base – Emitter terminals with a low collector current. This ensures that the device can quickly switch between on and off states, and therefore functions effectively in a variety of switching applications. The biasing structure of the transistor also ensures that it can handle large collector currents without significant changes in the temperature of the power semiconductor device. Furthermore, the wide gain bandwidth product of the PDTB114ETVL helps to minimize the effects of distortion, which is highly essential for providing accurate control in various automotive applications.</p> <p>The PDTB114ETVL is a highly reliable, cost-effective solution for use in automotive applications. It is designed to withstand over-temperature operation and provide improved avalanche energy durability. The combination of low saturation voltage, wide gain bandwidth, low common mode input offset voltage, and improved power output capability makes it highly suitable for driving current-regulating power switches, switching MOSFETs, and other applications. The device offers excellent current gain and low saturation voltage, ensuring reliable operation with high power output.</p>

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