PDTB123YS,126 Allicdata Electronics
Allicdata Part #:

PDTB123YS,126-ND

Manufacturer Part#:

PDTB123YS,126

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PREBIAS PNP 500MW TO92-3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: PDTB123YS,126 datasheetPDTB123YS,126 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 500mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: PDTB123
Description

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Bipolar junction transistors (BJTs) consist of three semiconductor layers that are connected to three electrical terminals - the base, the collector and the emitter. Bipolar junction transistors are widely used for amplification, switching and other applications. Pre-biased BJTs are widely used in industrial and automotive applications because they can remain in the pre-biased condition during operation, allowing them to be used in very high frequency applications where shutoff times are critical. PDTB123YS,126 is a single pre-biased bipolar junction transistor manufactured by STMicroelectronics. This transistor is available in TO-220 package, features an excellent collector-emitter voltage of 12V, a minimum break down voltage between the collector and emitter of 6V, a maximum collector current of 1.2A, a gain of minimum 100 at 1mA, a maximum collector-emitter voltage of 12V, and a turn-on time of 15ns.

Pre-biased bipolar junction transistors usually have a built-in base-emitter bias voltage, which can be used to get a desired quiescent output condition. The pre-biased BJTs are designed in such a way that no external bias network is required to achieve proper transistor operation. The advantages of these transistors include reduced component count, improved power efficiency, and minimal adjustments or calibration. This makes them ideal for use in embedded systems.

The working principle of PDTB123YS,126 pre-biased bipolar junction transistor is based on the principle of a current flowing through three layers of semiconductor material. The three layers, the collector, base and emitter, form a “sandwich” through which current flow from the collector to the emitter. When a small base-emitter current is introduced, a larger collector current is produced, resulting in the transistor being operated in amplification mode.

These transistors are commonly used in industrial systems to control the supply of current in motors, solenoids and relays. They are also used for signal amplification, switching and power control in automotive, medical and communication systems. These transistors also find applications in logic circuits, audio amplifiers and signal conditioning devices.

PDTB123YS,126 pre-biased bipolar junction transistor is an important component in embedded systems. It is used to switch and amplify signals in electronic circuits. It provides an efficient signal amplification because of its high gain, low power consumption and fast switching time. This makes it ideal for use in high-speed data processing applications, where fast response and minimal power consumption are essential.

In conclusion, the PDTB123YS,126 pre-biased bipolar junction transistor is an extremely versatile component, suitable for use in a variety of applications. It has a wide range of operating parameters, including a high collector-emitter voltage, high gain, low power consumption and fast switching time. This makes it an ideal choice for use in both industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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