PDTC114TE,115 Discrete Semiconductor Products

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The PDTC114TE and PDTC115 are pre-biased transistors that have the same functionality and performance characteristics. Both types are single-circuit transistors, typically used for power supplies, in computers, amplifiers and radios. They differ in their construction and in their bipolar junction transistor (BJT) design, which makes them suitable for different applications.

The PDTC114TE transistor is a NPN (Negative Positive Negative) type. It has an integrated base and a collector with a base-to-collector voltage of 20V. The total power dissipation of the PDTC114TE is 5W, which makes it ideal for high power applications. It also has a high current gain and low saturation voltage, making it suitable for driving high power circuits.

The PDTC115 is a PNP (Positive Negative Positive) type, and has a larger collector-to-base voltage of 30V. Its total power dissipation is 7W, making it more suitable for high power applications than the PDTC114TE. The PDTC115 also has a higher current gain and lower saturation voltage.

The main difference between the PDTC114TE and the PDTC115 is in their application fields. The PDTC114TE is typically used for applications that require a moderate amount of power, such as amplifiers and radios. The PDTC115, on the other hand, is better suited for more power-hungry applications, such as power supplies and high current circuits.

The working principle of these transistors is the same, regardless of their type. A junction is created between the emitter and base when the correct amount of voltage is applied. This allows current to flow from the emitter to the collector. The current gain (or hFE) is the ratio of the collector current to the base current. The saturation voltage refers to the amount of voltage applied to the base-collector junction to achieve a collector current of a specific value. Both transistors have a wide range of operating parameters and can withstand high power input levels.

The PDTC114TE and PDTC115 transistors are pre-biased transistors that serve different application fields. The PDTC114TE is a NPN type with a base-to-collector voltage of 20V and a total power dissipation of 5W, making it suitable for moderate to high power applications. The PDTC115 is a PNP type with a base-to-collector voltage of 30V and a total power dissipation of 7W, making it more suitable for high power applications. Both transistors employ the same basic working principles, but the PDTC115 has higher current gain and lower saturation voltage.

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