PDTC143EK,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	1µA
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SMT3; MPAK
Base Part Number:	DTC143

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PDTC143EK 115 Application Field and Working Principle

Introduction

PDTC143EK is a pre-biased single bipolar junction transistor (BJT) that allows current to flow between two terminals, namely the emitter and collector. This type of device works on the principle of three layers of semiconductor material, with one of them being n-type and other two being p-type doped layers. This type of BJT is commonly used in digital circuits due to its low power consumption and high speed operation.

Application Field

PDTC143EK is commonly used in amplifying small signals, providing digital control in small devices, and creating buffer circuits. This type of BJT is also used in switching small loads such as relays, motors and light bulbs. PDTC143EK is also used in voltage regulation and in small transistor-level analog circuits such as temperature sensors and voltage level detectors.

Working Principle

The PDTC143EK is biased such that its base-emitter junction is negatively charged. This negative charge forward biases the junction, allowing current to flow freely between the collector and emitter terminals, with the majority of the current flowing through the collector. The current flow can be controlled by altering the base-emitter voltages, allowing for current regulation. The voltage drop across the base-collector junction also affects the output current, as this junction\'s forward bias also needs to remain constant. The device also works on the principle of current amplification. The amount of current supplied at the input (base) will be multiplied by the Forward Current Transfer Ratio of the device (commonly called hFE), to generate a larger output current at the collector terminal. This current amplification can be used to increase the power delivered at the output and reduce the power dissipation at the input.

Conclusion

The PDTC143EK is a pre-biased single bipolar junction transistor, commonly used in amplifying small signals, providing digital control, switching small loads, and voltage regulation. It works on the principle of a three layer semiconductor material, with one of them being n-type and others being p-type doped layers. The device is forward biased, allowing current to flow through the collector-emitter terminals and current amplification from the base-emitter junction.

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