PMV20ENR

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PMV20ENR is a silicon avalanche power MOSFET designed for high-voltage and high-temperature applications. It is a high-performance, low-power, and low-profile, ultra-low temperature, high-density MOSFET that is ideal for use in a variety of applications, including power supply and telecommunications. The PMV20ENR is capable of constant on-state current up to 2 A and a voltage rating of up to 1200V. The MOSFET features a silicon nitride-oxide-sapped avalanche breakdown structure to reduce the gate-to-drain capacitance and allow higher switching speeds.

The PMV20ENR has a wide array of features and applications with its high-temperature and high-voltage ratings. Its low package profile allows for easy installation and maintains a large operating range from -65°C to 175°C. Its high switching speed allows for a fast response time and its low-resistance drain-source path enables higher performance. Its avalanche energy capability provides a high-reliability design for applications that require high- energy loads.

The PMV20ENR is suitable for high efficiency power supplies, automotive systems, solar inverters, and many other applications requiring a high-performance, low-power MOSFET. Its maximum voltage rating of 1200V is one of the highest available on the market, making it ideally suited for high-voltage applications.

The PMV20ENR features an advanced structure, enabled by the use of a silicon nitride-oxide-sapped (SNOS) avalanche breakdown technology. This technology results in a device that is small, yet still capable of continuous on-state current up to 2A. This structure is key to the device’s low-profile design and its ability to operate at higher voltages and higher switching speeds.

The PMV20ENR is a versatile MOSFET with a wide range of applications. Its high-voltage and low package profile enables it to be used in a variety of applications, including power supplies, automotive systems, solar inverters, and other high-performance applications. It is also capable of high-speed performance, enabling faster response times compared to other MOSFETs.

The working principle of the PMV20ENR is based on the avalanche breakdown technology used in its design. This technology enables a very low resistance path between the drain and the source, which allows for higher currents and faster switching speeds. When the gate voltage is increased, the electrons within the structure are accelerated and gain enough energy to overcome the potential barrier of the depletion region and avalanche. This avalanche effect is what gives the MOSFET its high-performance characteristics and allows it to operate at high voltages and high switching speeds.

In conclusion, the PMV20ENR is ideal for powering high-voltage and high-temperature applications. Its low resistance and high-frequency performance enable fast response times and high efficiency. It features a small package profile and a wide operating range, allowing the PMV20ENR to be used in a wide range of applications. The SNOS avalanche breakdown technology enables it to operate at higher voltages and higher switching speeds.

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