Allicdata Part #: | 1727-2528-2-ND |
Manufacturer Part#: |
PMV25ENEAR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V TO-236AB |
More Detail: | N-Channel 30V 5.5A (Ta) 460mW (Ta), 6.94W (Tc) Sur... |
DataSheet: | PMV25ENEAR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 460mW (Ta), 6.94W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 597pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMV25ENEAR is a special type of single MOSFET featuring a low threshold voltage and low on-state resistance, as well as improved switching performance, making it a great choice for many different applications.
A MOSFET is an insulated-gate field-effect transistor. Commonly used for high-enterance, remote-level transistor amplification, this type of transistor uses an applied voltage to control its conductive channel, which leads to a controlled current flow. MOSFETs are widely used in both low and high voltage electronic systems because of their low power consumption, low signal distortion, and higher switching speeds. Unlike bipolar transistors, MOSFETs don\'t require a constant current source to keep the transistor activated, leading to energy savings.
The PMV25ENEAR is a single N-Channel MOSFET, meaning it has one n- channel surrounded by two p-channels. It is constructed by forming a gate, made of doped polycrystalline silicon, over an insulated substrate. When electric circuitry is applied to the gate, a conductive channel forms between the source and drain. This channel is modulated by the gate voltage, directly controlling the flow of current.
The PMV25ENEAR features an ultra-low threshold voltage of 2.5V, which means the transistor can start conducting current with relatively small amounts of gate voltage. This makes it a great choice for low voltage power supply applications. Additionally, the PMV25ENEAR also has a very low on-state resistance of 25mOhm, allowing a high current to flow at a low voltage while maintaining low heat dissipation.
The PMV25ENEAR has the ability to switch very quickly, allowing high frequency signals to be easily amplified. This makes it great for high-speed switching applications, including power supply, motor control, and amplifier circuits. Additionally, it is a great choice for low-power, low-voltage applications due to its low resistance and threshold voltage.
The PMV25ENEAR is a popular and versatile single MOSFET, offering improved switching performance, low on-state resistance, and low threshold voltage. This makes it a great choice for a wide range of applications, from high-speed switching to low-power, low-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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