PMV27UPER Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	950mV @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	490mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1820pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	22.1nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	32 mOhm @ 4.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	4.5A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

PMV27UPER is a single N-channel enhancement Mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It has been designed to enable very high performance, energy efficient and robust devices with low on-state resistance and excellent switching characteristics. This particular device is sold by Infineon Technologies, a leading supplier of advanced semiconductor materials and circuits.

Overview of the Application Field and Working Principle

PMV27UPER is specifically designed for applications that require a high performance, low on-state resistance switch. Typical uses for this device include switching power supplies, DC-DC converters and motor control applications. The PMV27UPER is a voltage-controlled device, meaning that it can be used to control the flow of current in a circuit. When a positive voltage is applied to its gate, it will allow electrical current to pass from its source to its drain. When the voltage is removed from the gate, the current will be blocked.The PMV27UPER is built on a monolithic integrated circuit, which houses several components within a single chip. At the heart of the device is a series of MOSFETs, which are designed to act as a switch in order to control current flow. These MOSFETs are arranged in an N-channel configuration. That means that the source and drain are of the same type – meaning they are connected in a single polarity.These MOSFETs are coupled with a gate terminal, which is used to control the on/off status of the MOSFETs. When a positive voltage is applied to the gate terminal, it will cause the MOSFETs to turn on and allow current to flow through them. When the voltage is removed from the gate terminal, the MOSFETs will turn off and current will be blocked.The PMV27UPER also includes a Schottky diode for protection against reverse polarity connections. This diode helps to prevent damage to the device if it’s connected in the wrong way. The PMV27UPER has a variety of features including a low on-state resistance of 63 mOhms and a maximum current rating of 89.6 A. The device is also rated at a maximum voltage of 20 V and a maximum power dissipation of 240 W.

Conclusion

The PMV27UPER is an advanced single N-channel MOSFET device that has been designed to provide high performance and low on-state resistance. The device is designed for applications that require switching power supplies, DC-DC converters, and motor control. The PMV27UPER is composed of MOSFETs arranged in an N-channel configuration and includes a Schottky diode for protection against reverse polarity connections. The device is rated at a voltage of 20 V, current of 89.6 A and power dissipation of 240 W.

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