PMV213SN,215 Allicdata Electronics

PMV213SN,215 Discrete Semiconductor Products

Allicdata Part #:

1727-6294-2-ND

Manufacturer Part#:

PMV213SN,215

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V 1.9A SOT23
More Detail: N-Channel 100V 1.9A (Tc) 280mW (Tj) Surface Mount ...
DataSheet: PMV213SN,215 datasheetPMV213SN,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.13813
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280mW (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 20V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Field effect transistors, or FETs, are a type of semiconductor devices used to control and regulate the flow of electric current. They work by manipulating two different elements: the source and the drain. When the two elements are connected, they create an electric current with a controlled direction. FETs are often used in amplifiers, electronic circuits, and switching applications. In particular, the PMV213SN and PMV215 are two types of junction FETs that are utilized for a variety of purposes.

A PMV213SN is an N-Channel Dual Gate FET that operates as a variable resistor and uses two terminals, the source and drain. In operation, the FET is powered by a voltage applied to the gate terminal, which is connected to a control circuit. This changes the resistance of the junction FET, allowing more current to flow through the junction, thus reducing the impedance of the signal. This makes the PMV213SN suitable for voltage-controlled resistance applications, such as in oscillator circuits and frequency converters.

The PMV215 is an N-Channel Single Gate FET that utilizes a single gate terminal and three terminals (source, gate, and drain). This type of FET is commonly used in switching applications as well as in when a control signal needs to be amplified. It works like a conventional transistor with an increase in the gate voltage leading to a decrease in the source-drain resistance. For example, the PMV215 can be used to create one-way switches in electrical circuits or to activate signals. This allows complex systems to be controlled with a single signal.

The principle of operation of both PMV213SN and PMV215 FETs can be summarized in the following way. In each of these FETs, a small electric field is created between the source and the drain when voltage is applied to the gate terminal. This electric field interacts with the semiconductor material and modulates the source-drain current. By controlling the amount of current flowing through the FET, the device can be used to control electrical currents in many different applications.

The PMV213SN and PMV215 are versatile FETs that can be used in a wide range of applications. They are suitable for high-frequency switching, voltage-controlled resistance applications, amplifiers, and more. Their versatile design and wide range of applications make them ideal for a variety of projects and applications.

The specific data is subject to PDF, and the above content is for reference

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