PMV20XN,215 Discrete Semiconductor Products |
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| Allicdata Part #: | 568-7534-2-ND |
| Manufacturer Part#: |
PMV20XN,215 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | MOSFET N-CH 30V 4.8A SOT23 |
| More Detail: | N-Channel 30V 4.8A (Ta) 510mW (Ta) Surface Mount T... |
| DataSheet: |  PMV20XN,215 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 4.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 4.8A, 4.5V |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
| Vgs (Max): | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 585pF @ 15V |
| FET Feature: | -- |
| Power Dissipation (Max): | 510mW (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-236AB (SOT23) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Description
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The PMV20XN,215 is a type of transistor, specifically a field effect transistor (FET). It\'s a type of single FET, and it\'s used in a variety of different applications. In this article, we\'ll look at the application field and working principle of the PMV20XN,215.First of all, FETs are transistors that are controlled by an electrical field instead of an electrical current. This makes them more power efficient than other types of transistors - they don\'t require as much current to operate. As a result, they\'re often used in power management applications and other situations where power efficiency is important.In terms of the PMV20XN,215, it\'s commonly used in power electronics applications, such as battery management systems and DC-DC converters. It\'s also used for high-power switching, as well as for high-voltage and high-temperature applications.In terms of its working principle, the PMV20XN,215 operates by using an electric field to control the flow of current through it. When a voltage is applied to the gate of the transistor, it creates an electric field that either attracts or repels the electrically charged carriers - electrons or holes - in the transistor. This causes the current to either increase or decrease, depending on the type of FET.For the PMV20XN,215, it\'s a depletion-mode FET. This means that when the gate voltage is applied, the current through the transistor decreases. This can be used in various ways, such as to control the current through a circuit or to switch on or off various parts of an electronic system. The PMV20XN,215 also has a high breakdown voltage, which makes it useful for high-voltage applications such as motor control. It has a high current capacity as well, which makes it useful for high-power switching applications.Finally, the PMV20XN,215 is also known for its low on-resistance and high efficiency, which make it a good choice for high-efficiency applications.In conclusion, the PMV20XN,215 is a type of single FET that has a wide range of applications in power electronics and other fields. It operates by using an electric field to control the current flow and has a high breakdown voltage, high current capacity, and low on-resistance. It is also known for its high efficiency, making it suitable for high-efficiency applications.
The specific data is subject to PDF, and the above content is for reference
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