Allicdata Part #: | 1727-2526-2-ND |
Manufacturer Part#: |
PMV20XNEAR |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V TO-236AB |
More Detail: | N-Channel 20V 6.3A (Ta) 460mW (Ta), 6.94W (Tc) Sur... |
DataSheet: | PMV20XNEAR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10725 |
Vgs(th) (Max) @ Id: | 1.25V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 460mW (Ta), 6.94W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 930pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 6.3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6.3A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A PMV20XNEAR is a high voltage and high performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) which is manufactured and designed to provide superior performance and reliability. The PMV20XNEAR is usually used in various power control and switch-mode applications, thanks to its high electrical and thermal stability.
The design of the PMV20XNEAR utilizes advanced process technology and trench gate structures, allowing for better capabilities in high-frequency switching, improved power efficiency, and lower switching losses. The device\'s structure, with its symmetrical body structure, provides excellent symmetrical and low gate charge characteristics, thus allowing for better ESD (Electrostatic Discharge) and latch-up immunity than other MOSFETs.
The PMV20XNEAR is typically used in applications such as power converters, battery protection circuits, AC/DC, DC/DC converters, motor controllers, H-bridge drivers, switch-mode power supplies, and synchronous phase-shift switching. This device has also been proven to be excellent for use in switching regulator designs, since its high performance and low power loss characteristics makes it a good choice for such designs.
The PMV20XNEAR is specified over a broad range of currents and voltage levels. Its wide usage range is from 0.07V to 600V, making it suitable for various high-voltage applications. It is also IC compatible and suitable for surface mount packaging and other packages.
The PMV20XNEAR\'s working principle is based on the operation of a MOSFET, which is a three-terminal semiconductor device. The Channel (the controlled element) of the MOSFET imposes a voltage drop between the Drain and Source terminals, which results in the flow of current from the Source to the Drain. The Gate terminal is used to control the current that is flowing through the Channel.
The PMV20XNEAR has an exceptionally low turn-on resistance, and the maximum on-state current can be controlled by the Gate voltage. The turn-off time and output capacitance are also very stable. Its low on-state voltage drop, high frequency capability, and its thermal stability make it an ideal choice for many applications.
In addition, this MOSFET can also be used in linear/regulating applications due to its low output voltage and low switching noise, as well as its wide operating temperature range.
Overall, the PMV20XNEAR is an extremely versatile and reliable device designed for high voltage and power control applications. Its high performance and low power loss characteristics make it a perfect choice for many switch-mode applications.
The specific data is subject to PDF, and the above content is for reference
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