PMV280ENEAR Discrete Semiconductor Products |
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Allicdata Part #: | 1727-8341-2-ND |
Manufacturer Part#: |
PMV280ENEAR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 1.1A TO236AB |
More Detail: | N-Channel 100V 1.1A (Ta) 580mW (Ta) Surface Mount ... |
DataSheet: | PMV280ENEAR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 580mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6.8nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 385 mOhm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.1A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PMV280ENEAR is an advanced power metal oxide semiconductor field-effect transistor (MOSFET) with an RDS on of 280mOhms and a low gate charge. It is designed for use in switch-mode power supplies, ac-dc converters, and motors, as well as other high power switching applications. This device provides high efficiency, low cost, and high switching frequency operation.
As a single-gate device, the PMV280ENEAR is designed to control current in two directions, both directions in the same active power cycle. The device has a single-gate structure, with two gates separated by a thin oxide layer. Each of the two gates is usually driven by an independent control signal and are attributed with separate functions. One gate is the primary, or "source" gate, and controls the conducting state of the device, while the other, the "gate" gate, serves to reduce the gate charge.
The primary purpose of the PMV280ENEAR is to control and switch power. In the commonly used switching mode power supply (SMPS) applications, this device would allow for the efficient control of current. It is able to handle voltage levels up to 650V and higher, and can switch frequencies of up to 100kHz. The device also has a low gate charge, allowing it to switch quickly and efficiently.
When this device is used as a discrete semiconductor, it is known as an active switch. It works by applying a low voltage signal to the source gate, which is then amplified by the current flowing through the device. This current is then converted into a high voltage signal that is applied to the gate gate. The gate is then able to control the current flow, allowing it to switch on and off.
The PMV280ENEAR was designed to take advantage of both the current and the voltage capabilities of either gate. With the gate gate acting as a voltage source and the source gate as a current source, this device is able to act as either an analog or a digital switch. The device is also capable of working in both directions, as well as being capable of operating at high frequencies. This makes it an ideal choice for applications that require efficient and reliable power control.
The PMV280ENEAR is a powerful and compact MOSFET that lends itself well to demanding applications. With its low on resistance, high voltage capability, and high switching frequency, the device is a great choice for a variety of applications. Whether used in a discrete transistor configuration or as part of an integrated circuitry, this device is well suited for both low power and high power switching applications.
The specific data is subject to PDF, and the above content is for reference
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