PMV28UN,215 Discrete Semiconductor Products

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PMV28UN,215 is part of an advanced family of single MOSFETs (metal-oxide-semiconductor field-effect transistors) from ROHM Semiconductor. Designated from 28th product series of MOSFETs, as given by manufacturer, they are called 28 Series Un-buffered Power MOSFETS. This MOSFET series’ unique product differentiation feature is its high-current drive capability that serves its purpose to achieve higher system efficiency. This article will discuss the application field and working principle of PMV28UN,215.

The PMV28UN,215 represents a 20-V single N-channel MOSFET with an enhanced level of current drive. The device is optimized for driving H-bridge gates in high-current applications such as a DC brushless motor. The part comes in the DFN2020 package and is characterized with maximum drain current of 5.4 A at 3.2 V Drain-Source Voltage (VDSS), and a drain-source resistance (RDS [ON]) of 0.041 Ω at a VGS of 4.5 V and a maximum temperature of 150°C.

The main application field of the PMV28UN,215 is served as illustrated below. DC brushless motors, such as in appliances and home electronics, are the main application field for this enhanced current drive level MOSFETs. It is also used in automotive electronics, specifically in applications such as high-current stepper motors, fuel pumps, and power window motors. Furthermore, due to the low on-resistance and high surge capability, it is also useful in DC-DC motor controllers, drivers, and motor control circuits.

The device works on the principle of creating an electric field and by decreasing the losses, it reduces the overall power dissipation. MOSFETs are voltage controlled semiconductor device with four terminals, called gate, source, drain and body. By applying a voltage at the gate, it controls the width of the electrical channel that connects the Source to the Drain, applying a voltage potential between them. PMV28UN,215 are N-channel MOSFET using an N-type material that supports current flow across the device. These devices have higher current and power handling capability as compared to other MOSFETs in the same family. The PMV28UN,215 is also characterized with higher surge capability (up to 10X the normal maximum drain current) to sustain high current thrusts needed to drive DC brushless motors. Enveloping the heat generated by the increased current surges, it allows the device to operate in a larger temperature range. Power losses, in general, are low in PMV28UN,215 due to their high frequency performance and fast switching times.

In conclusion, PMV28UN,215 is part of an advanced family of single MOSFETs from ROHM Semiconductor. It is mainly used as an H-bridge gate driver to drive DC brushless motors in high efficiency applications, as well as for automotive applications. It also finds applications in DC-DC motor controllers, drivers, and motor control circuits. The device operates on the principle of creating an electric field by applying a voltage at the gate to reduce the overall power dissipation. It is characterized with high current drive capability, low on-resistance, and high surge capability that allows it to sustain high current thrusts needed to drive DC brushless motors.

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