PMV20XNER Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2302-2-ND |
Manufacturer Part#: |
PMV20XNER |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V SOT23 |
More Detail: | N-Channel 30V 5.7A (Ta) 510mW (Ta), 6.94W (Tc) Sur... |
DataSheet: | PMV20XNER Datasheet/PDF |
Quantity: | 9000 |
3000 +: | $ 0.07447 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 510mW (Ta), 6.94W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 18.6nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 5.7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.7A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PMV20XNER is a N-channel MOSFET with excellent RDS(ON) and power dissipation characteristics. As part of the Single FET family, it is a great choice for numerous applications because of its low on resistance and high withstanding voltage. Its features include low on-state resistance, wide drain-source voltage range, low input capacitance, and low gate charge. This makes the PMV20XNER ideal for power amplifier, switching power supply, and DC/DC converters.
The PMV20XNER consists of an insulated gate field effect transistor (IGFET) that uses MOS capacitor structures to control the current flow between source and drain. In addition to the source and drain terminals, the PMV20XNER also has a gate terminal. In most MOSFETs, this gate terminal is insulated, making it the “insulated gate” referenced by the name. The gate terminal is responsible for controlling the current between the source and drain.
The PMV20XNER’s working principle is simple and straightforward. When a positive potential is applied to the gate, positive charges are attracted to the gate and form an inversion layer between the gate and the substrate. This inversion layer acts as a conduit for current flow between the source and the drain. The higher the voltage at the gate, the stronger the inversion layer, and the greater the current that is allowed to flow through the MOSFET.
The PMV20XNER is incredibly versatile. It is suitable for a wide range of applications, including power management, motor control, and high-current switches. It can be used as a low-side switch, a high-side switch, or a bidirectional switch, enabling it to be used for numerous applications. It is also a great choice for automotive systems, as it is designed to operate in extreme temperatures. The wide drain-source voltage range makes it suitable for both low-voltage and high-voltage applications.
The PMV20XNER is a great choice for power amplifier and switching power supply applications because of its low on-state resistance. Its low input capacitance allows for high-frequency switching. Its versatile design makes it a popular choice for DC/DC converters as it is able to handle both low-voltage and high-voltage applications. Its wide drain-source voltage range enables it to be used for both high-current and low-current applications.
The PMV20XNER is a great choice for applications requiring high withstanding voltage and low on-state resistance. Its wide drain-source voltage range makes it suitable for numerous applications, from power management to motor control. With its low input capacitance, it is perfect for high-frequency switching. Overall, the PMV20XNER is a great choice for any application requiring a single FET with exceptional performance.
The specific data is subject to PDF, and the above content is for reference
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