Allicdata Part #: | PSMN012-100YLX-ND |
Manufacturer Part#: |
PSMN012-100YLX |
Price: | $ 0.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 85A LFPAK56 |
More Detail: | N-Channel 100V 85A (Ta) 238W (Ta) Surface Mount LF... |
DataSheet: | PSMN012-100YLX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.33689 |
Gate Charge (Qg) (Max) @ Vgs: | 118nC @ 10V |
Package / Case: | SC-100, SOT-669 |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 238W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7973pF @ 25V |
Vgs (Max): | ±20V |
Series: | TrenchMOS™ |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Rds On (Max) @ Id, Vgs: | 11.9 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 85A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The PSMN012-100YLX is a N-channel FET, available in a 4-pin DPAK package, with a maximum power dissipation rating of 1.2 W and maximum continuous drain current of 108 A. It is commonly used in the fields of communication, computer, and telecommunication.
A FET is a field-effect transistor, so named because of its ability to control the flow of electrons in a semiconductor with an applied electric field. Compared to other transistors, FETs require less current, produce less noise, and have no need for biasing. They are also typically much faster than other transistor types, and are therefore increasingly being used in all kinds of electronic devices.
The PSMN012-100YLX is a reflecting-gate (RG) N-channel Metal-Oxide-Semiconductor FET, or MOSFET, meaning it has a gate, source, and drain constructed from a combination of N-type MOS transistors to provide enhanced switching performance. It is a single-FET solution with an adjustable current limit that can be set as high as 108 A and a maximum operating voltage of 30 V.
When the gate is off, the device is non-conductive due to its high input impedance, allowing electrons to remain at the drain and thus creating a short-circuit protection and thermal overload protection. With the gate turned on, the device becomes conductive allowing current to flow from the drain to the source, producing power. This makes the PSMN012-100YLX well suited to high-power applications such as motor control, solar panel switching, and high-current battery charging.
The PSMN012-100YLX is easy to use with linear or switching power supplies, and provides an adjustable current limit that can be tailored to the specific application. In addition, the device operates with a low gate threshold voltage of 4 V, enabling the device to be activated using logic-level signals. This means that the device is compatible with a wide range of circuit architectures, including those without an isolated power supply.
The PSMN012-100YLX is a versatile device, capable of being used in numerous applications. It can be used in switched-mode power supply applications to provide step-down conversion, as well as in AC/DC converters to produce a high current with minimal losses. It can also be used for a variety of motor control applications, high-power switching, and automotive systems. In addition, the PSMN012-100YLX can be used in solar high-current applications, making it an ideal solution for battery charging and protection.
In short, the PSMN012-100YLX is a high-performance single-FET solution providing adjustable current limit as well as short-circuit and thermal overload protection. Its low gate threshold voltage makes it compatible with a wide range of circuit architectures, while its high power handling capacity makes it ideal for a range of high-power applications.
The specific data is subject to PDF, and the above content is for reference
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