PSMN4R3-30BL,118 Allicdata Electronics

PSMN4R3-30BL,118 Discrete Semiconductor Products

Allicdata Part #:

1727-7116-2-ND

Manufacturer Part#:

PSMN4R3-30BL,118

Price: $ 0.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 100A D2PAK
More Detail: N-Channel 30V 100A (Tc) 103W (Tc) Surface Mount D2...
DataSheet: PSMN4R3-30BL,118 datasheetPSMN4R3-30BL,118 Datasheet/PDF
Quantity: 1000
800 +: $ 0.39003
Stock 1000Can Ship Immediately
$ 0.43
Specifications
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 103W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PSMN4R3-30BL,118 is a single N-Channel Powertrench MOSFET with Logic Level compatible gate drive and low on-resistance Rds(on) of 4.3mΩ. It belongs to the family of transistors and field effect transistors (FETs and MOSFETs).

A field effect transistor (FET) is an electronic device, composed essentially of two regions of semiconductor material, shaped and arranged so that one of these regions, the gate region, can be used to control the flow of electrons from one support region to the other. FETs are commonly used in radio transmitters and receivers, amplifiers, oscillators and computer circuits. By appropriate choice of the device parameters and design topology, it is possible to construct FETs with unique characteristics best suited for particular applications.

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of FET used in the field of electronics. It is a three-terminal device (or four-terminal device in some special cases) that utilizes a field effect to control the electrical behavior of the device. The MOSFET is the most widely used type of FET due to its wide range of applications and excellent characteristics. It is used as a switch or amplifier in a variety of electronic circuits.

The PSMN4R3-30BL,118 is a single N-Channel Powertrench MOSFET that is specifically designed for use in power applications such as power supplies, lighting control and motor control applications. It is a highly efficient device that has a low on-resistance Rds(on) of 4.3mΩ and a logic level compatible gate drive. The device also features an integrated protection circuit that ensures safe operation under fault conditions.

The working principle of the PSMN4R3-30BL,118 is based on the MOSFET principle. In this device, an input voltage applied to the gate terminal creates an electric field that controls the current through the two terminations. The gate terminal is insulated from the rest of the transistor and does not conduct current. The current flow from the drain to the source is proportional to the input voltage applied to the gate terminal. The flow of current can be increased or decreased based on the application requirements.

The PSMN4R3-30BL,118 is a versatile device and is used in numerous applications. It is especially used in the field of power electronics for high- efficiency applications such as switch-mode power supplies, power conversion circuits, and mains voltage dimmers. It can also be used in motor control applications such as motor speed controllers, motor commutators and electric motor drives. Other applications include LED lighting, home automation, and industrial automation systems.

The PSMN4R3-30BL,118 is a highly efficient and reliable device which is widely used in the field of power electronics. The low on-resistance Rds(on) of the device combined with its logic-level compatibility makes it highly suitable for a variety of applications. The integrated protection circuit ensures safe and reliable operation in the long run.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "PSMN" Included word is 40
Part Number Manufacturer Price Quantity Description
PSMN012-100YS,115 Nexperia USA... 0.42 $ 1000 MOSFET N-CH 100V 60A LFPA...
PSMN9R0-25MLC,115 Nexperia USA... 0.15 $ 1500 MOSFET N-CH 25V 55A LFPAK...
PSMN075-100MSEX Nexperia USA... -- 1000 MOSFET N-CH 100V 18A LFPA...
PSMN8R7-100YSFQ Nexperia USA... 0.48 $ 1000 PSMN8R7-100YSF/SOT669/LFP...
PSMN1R1-25YLC,115 Nexperia USA... 0.46 $ 7500 MOSFET N-CH 25V 100A LFPA...
PSMN028-100YS,115 Nexperia USA... 0.26 $ 27000 MOSFET N-CH 100V 42A LFPA...
PSMN5R6-100YSFX Nexperia USA... 0.75 $ 1000 PSMN5R6-100YSF/SOT1023/4 ...
PSMN8R0-80YLX Nexperia USA... 0.36 $ 1000 MOSFET N-CH 80V 100A LFPA...
PSMN2R0-30YL,115 Nexperia USA... 0.32 $ 6000 MOSFET N-CH 30V 100A LFPA...
PSMN9R8-30MLC,115 Nexperia USA... 0.15 $ 1000 MOSFET N-CH 30V 50A LFPAK...
PSMN2R7-30PL,127 Nexperia USA... 1.16 $ 381 MOSFET N-CH 30V TO220ABN-...
PSMN2R1-60CSJ Nexperia USA... 0.0 $ 1000 MOSFET N-CH 60V D2PAKMOSF...
PSMN3R9-60PSQ Nexperia USA... 1.74 $ 4986 MOSFET N-CH 60V SOT78N-Ch...
PSMN1R6-30PL,127 Nexperia USA... 2.31 $ 4452 MOSFET N-CH 30V 100A TO22...
PSMN030-60YS,115 Nexperia USA... 0.15 $ 39000 MOSFET N-CH 60V 29A LFPAK...
PSMN016-100PS,127 Nexperia USA... 0.78 $ 2570 MOSFET N-CH 100V TO220ABN...
PSMN5R6-60YLX Nexperia USA... 0.29 $ 1000 MOSFET N-CH 60V LFPAK56N-...
PSMN3R0-60ES,127 Nexperia USA... 1.71 $ 4539 MOSFET N-CH 60V 100A I2PA...
PSMN022-30BL,118 Nexperia USA... 0.3 $ 1000 MOSFET N-CH 30V 30A D2PAK...
PSMN025-80YLX Nexperia USA... 0.19 $ 7500 MOSFET N-CH 60V LFPAK56N-...
PSMN130-200D,118 Nexperia USA... 0.5 $ 10000 MOSFET N-CH 200V 20A DPAK...
PSMN1R3-30YL,115 Nexperia USA... 0.54 $ 1000 MOSFET N-CH 30V 100A LFPA...
PSMN8R0-30YL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V 62A LFPAK...
PSMN1R6-30BL,118 Nexperia USA... 0.83 $ 4000 MOSFET N-CH 30V 100A D2PA...
PSMN6R5-80BS,118 Nexperia USA... 0.73 $ 1000 MOSFET N-CH 80V 100A D2PA...
PSMN070-200B,118 Nexperia USA... 1.2 $ 800 MOSFET N-CH 200V 35A D2PA...
PSMN057-200B,118 Nexperia USA... 0.76 $ 4000 MOSFET N-CH 200V 39A D2PA...
PSMN027-100BS,118 Nexperia USA... 0.43 $ 5600 MOSFET N-CH 100V 37A D2PA...
PSMN5R0-100ES,127 Nexperia USA... 2.55 $ 2966 MOSFET N-CH 100V 120A I2P...
PSMN1R7-60BS,118 Nexperia USA... 1.2 $ 1000 MOSFET N-CH 60V 120A D2PA...
PSMN1R7-25YLC,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 25V 100A LFPA...
PSMN8R9-100BSEJ Nexperia USA... 0.95 $ 1000 PSMN8R9-100BSE/SOT404/D2P...
PSMN3R3-80ES,127 Nexperia USA... 1.34 $ 1000 MOSFET N-CH 80V 120A I2PA...
PSMN039-100YS,115 Nexperia USA... 0.2 $ 159000 MOSFET N-CH LFPAKN-Channe...
PSMN3R5-25MLDX Nexperia USA... 0.21 $ 1000 PSMN3R5-25MLD/MLFPAK/REEL...
PSMN4R8-100BSEJ Nexperia USA... -- 7200 MOSFET N-CH 100V D2PAKN-C...
PSMN016-100YS,115 Nexperia USA... 0.29 $ 1000 MOSFET N-CH LFPAKN-Channe...
PSMN015-100B,118 Nexperia USA... 0.84 $ 5600 MOSFET N-CH 100V 75A D2PA...
PSMN013-60YLX Nexperia USA... 0.22 $ 1000 MOSFET N-CH 60V LFPAK56N-...
PSMN8R5-100ESQ Nexperia USA... 1.32 $ 5126 MOSFET N-CH 100V 100A I2P...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics