![PSMN4R3-30BL,118 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
PSMN4R3-30BL,118 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-7116-2-ND |
Manufacturer Part#: |
PSMN4R3-30BL,118 |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 100A D2PAK |
More Detail: | N-Channel 30V 100A (Tc) 103W (Tc) Surface Mount D2... |
DataSheet: | ![]() |
Quantity: | 1000 |
800 +: | $ 0.39003 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 103W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.1 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PSMN4R3-30BL,118 is a single N-Channel Powertrench MOSFET with Logic Level compatible gate drive and low on-resistance Rds(on) of 4.3mΩ. It belongs to the family of transistors and field effect transistors (FETs and MOSFETs).
A field effect transistor (FET) is an electronic device, composed essentially of two regions of semiconductor material, shaped and arranged so that one of these regions, the gate region, can be used to control the flow of electrons from one support region to the other. FETs are commonly used in radio transmitters and receivers, amplifiers, oscillators and computer circuits. By appropriate choice of the device parameters and design topology, it is possible to construct FETs with unique characteristics best suited for particular applications.
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of FET used in the field of electronics. It is a three-terminal device (or four-terminal device in some special cases) that utilizes a field effect to control the electrical behavior of the device. The MOSFET is the most widely used type of FET due to its wide range of applications and excellent characteristics. It is used as a switch or amplifier in a variety of electronic circuits.
The PSMN4R3-30BL,118 is a single N-Channel Powertrench MOSFET that is specifically designed for use in power applications such as power supplies, lighting control and motor control applications. It is a highly efficient device that has a low on-resistance Rds(on) of 4.3mΩ and a logic level compatible gate drive. The device also features an integrated protection circuit that ensures safe operation under fault conditions.
The working principle of the PSMN4R3-30BL,118 is based on the MOSFET principle. In this device, an input voltage applied to the gate terminal creates an electric field that controls the current through the two terminations. The gate terminal is insulated from the rest of the transistor and does not conduct current. The current flow from the drain to the source is proportional to the input voltage applied to the gate terminal. The flow of current can be increased or decreased based on the application requirements.
The PSMN4R3-30BL,118 is a versatile device and is used in numerous applications. It is especially used in the field of power electronics for high- efficiency applications such as switch-mode power supplies, power conversion circuits, and mains voltage dimmers. It can also be used in motor control applications such as motor speed controllers, motor commutators and electric motor drives. Other applications include LED lighting, home automation, and industrial automation systems.
The PSMN4R3-30BL,118 is a highly efficient and reliable device which is widely used in the field of power electronics. The low on-resistance Rds(on) of the device combined with its logic-level compatibility makes it highly suitable for a variety of applications. The integrated protection circuit ensures safe and reliable operation in the long run.
The specific data is subject to PDF, and the above content is for reference
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