PSMN6R5-80BS,118 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-7213-2-ND |
Manufacturer Part#: |
PSMN6R5-80BS,118 |
Price: | $ 0.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 80V 100A D2PAK |
More Detail: | N-Channel 80V 100A (Tc) 210W (Tc) Surface Mount D2... |
DataSheet: | PSMN6R5-80BS,118 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.66130 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 210W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4461pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.9 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PSMN6R5-80BS,118 Application Field and Working Principle
The PSMN6R5-80BS,118 is a single P-channel metal oxide semiconductor field effect transistor (MOSFET). It is an advanced power MOSFET that was developed using advanced MOSFET process technology.
Application Fields
The PSMN6R5-80BS,118 has a wide range of possible applications because of its wide operating characteristics. It is suitable for use in a variety of power and high frequency switching applications. The device can be used for low voltage, power switching and for high frequency, high efficiency, and high speed applications such as switched-mode DC/DC converters, DC/DC and DC/AC conversion, automotive and renewable energy systems, and power management circuits. It can also be used in audio amplifiers and load switches. Additionally, it is featuring an enhanced immunity to latch-up failures due to its low on-state resistance and its fast switching times.
Working Principle
The PSMN6R5-80BS,118 is a voltage-controlled device that is used for controlling the flow of electric current. It is made up of three regions called the drain, source, and gate. The source is connected to the ground, and the drain is connected to the positive voltage supply (VCC). When a positive voltage is applied to the gate, it creates an electric field between the drain and the source that facilitates a positive current flow from the drain to the source. This type of transistor is usually used for controlling current, as it can be switched on and off quickly, allowing for better control of the current.
Conclusion
In conclusion, the PSMN6R5-80BS,118 is a single P-channel metal oxide semiconductor field effect transistor (MOSFET) with many applications. It is suitable for use in a variety of power and high frequency switching applications and its fast switching speeds and enhanced immunity to latch-up failures make it an ideal device for many different applications. It can be used in audio amplifiers, load switches, DC/DC and DC/AC converters, power management circuits, and many other applications. Overall, it is an excellent device for controlling current flow in complex circuits.
The specific data is subject to PDF, and the above content is for reference
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