PSMNR90-30BL,118

Vgs(th) (Max) @ Id:	2.2V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	306W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	14850pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	243nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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PSMNR90-30BL is a single FET transistor, which stands for Power MOSFET-90A-30VBlocking. It is generally used in industrial applications. This article covers the application field and working principle of the PSMNR90-30BL transistor.ApplicationThe PSMNR90-30BL is designed for medium voltage and high current applications, such as rectifiers, switching power supplies, and voltage regulators. Some of its applications include, uninterruptible power supplies, electric vehicles, and power tools. Due to its high current capabilities, this transistor is also used in applications involved with motor control and in applications such as laser power supplies, lighting, and welding. Additionally, it can be used in solar inverters and fuel cell systems.Working PrincipleThe PSMNR90-30BL transistor is an enhancement-mode power MOSFET. This type of MOSFET is based on the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) structure. It works by controlling the voltage between the source and drain of the transistor. A small current is applied to the gate electrode, which attracts electrons from the source through the insulator material, and the source and drain become connected. When the voltage applied to the gate is removed, the electrons go back to the source, and the source and drain are once again disconnected.The PSMNR90-30BL includes a high-drain breakdown voltage and low on-state resistance. It is designed to provide efficient operation for loads up to 90A. The amount of current that can be driven through the transistor is limited by its on-resistance and the supplies voltage. The PSMNR90-30BL is designed to handle highly inductive loads and features an internal temperature sensor that is designed to protect the device from overheating.ConclusionThe PSMNR90-30BL is a single FET transistor that is designed for medium voltage and high current applications. It is an enhancement-mode power MOSFET and has a high drain breakdown voltage and low on-state resistance. Its applications include electric vehicles, power tools, motor control, and solar inverters. The transistor is protected by an internal temperature sensor, which helps to protect against overheating.

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