PSMN035-150P,127 Allicdata Electronics
Allicdata Part #:

1727-4661-ND

Manufacturer Part#:

PSMN035-150P,127

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 150V 50A SOT78
More Detail: N-Channel 150V 50A (Tc) 250W (Tc) Through Hole TO-...
DataSheet: PSMN035-150P,127 datasheetPSMN035-150P,127 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4720pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 35 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PSMN035-150P,127 Application Field and Working Principle

A PSMN035-150P,127 is a type of Field Effect Transistor (FET) which is used to control power in applications such as in power amplifiers, inverters, digital switching circuits, low impedance loads and so on. It is also known as a single depletion-mode MOSFET and is composed of four terminals: gate (G), drain (D), source (S) and bulk (or body, B).

Working Principle

The PSMN035-150P,127 FET works by using the effect of capacitive coupling between its gate and drain terminals. By varying the voltage at the gate terminal of the FET, the electric field between it and the drain terminal adjusts, changing the channel resistance and resulting in a change in the current from source to drain. This is how the gate terminal acts as an electronic switch for the device, controlling the amount of current that is allowed to flow through the device.

The electrical resistance of the channel between the gate and the drain is directly proportional to the voltage on the gate terminal, and this can be used to control the amount of current that flows in the drain-source region of the transistor. When the gate voltage is increased, the electric field between it and the drain terminal also increases, resulting in higher channel resistance and less current flowing. Conversely, when the gate voltage is decreased, the electric field between it and the drain terminal decreases, resulting in lower channel resistance and more current flowing.

Application Field

The PSMN035-150P,127 MOSFET has a wide variety of applications including motor control and power electronics. This device is especially suitable for use in power amplifiers, inverters, and digital switching circuits because of its features such as low conductance, low gate threshold voltage, low leakage current, and enhanced performance. Additionally, the MOSFET can be used in inductive, capacitive, and resistive loads, making it a very versatile device for a wide range of applications.

The PSMN035-150P,127 FET is also commonly used in consumer electronics such as laptops and medical devices. In medical applications, the FET is used as an electronic switch to control the flow of current in devices such as pacemakers, imaging devices, and heart monitors. In laptops and other portable devices, the FET is used as a low impedance load in power supply circuits to prevent overloading of the system.

The PSMN035-150P,127 FET also has applications in the automotive industry, due to its low power consumption, small size, and low switching time. It is used in many automotive applications such as engine control systems, instrument clusters, and even ABS braking systems.

Conclusion

In conclusion, the PSMN035-150P, 127 is a single depletion-mode MOSFET which is composed of four terminals: gate, drain, source and bulk. It is an important device as it has a wide variety of applications, from medical to automotive. Its low channel resistance and low leakage current allows it to be used in low impedance loads, as well as its ability to help prevent system overloads with its small size and low switching time. Therefore, this type of FET is highly sought-after due to its features and its wide range of applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "PSMN" Included word is 40
Part Number Manufacturer Price Quantity Description
PSMN1R6-60CLJ Nexperia USA... 0.0 $ 1000 MOSFET N-CH 60V D2PAKMOSF...
PSMN2R1-60CSJ Nexperia USA... 0.0 $ 1000 MOSFET N-CH 60V D2PAKMOSF...
PSMN1R6-40YLC:115 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 40V 100A POWE...
PSMN012-25YLC,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 25V 33A LFPAK...
PSMN1R6-40YLC,115 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 40V 100A LFPA...
PSMN023-40YLCX NXP USA Inc 0.0 $ 1000 MOSFET N-CH 40V 24A LFPAK...
PSMN1R8-30BL,118 Nexperia USA... 0.92 $ 1000 MOSFET N-CH 30V 100A D2PA...
PSMN7R5-30MLDX Nexperia USA... -- 1000 MOSFET N-CH 30V 57A LFPAK...
PSMN085-150K,518 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 150V 3.5A SOT...
PSMN1R7-25YLC,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 25V 100A LFPA...
PSMN3R7-30YLC,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V 100A LFPA...
PSMN3R7-25YLC,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 25V 97A LFPAK...
PSMN3R2-30YLC,115 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 30V 100A LFPA...
PSMN3R2-25YLC,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 25V 100A LFPA...
PSMN9R0-30LL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V QFN3333N-...
PSMN7R0-40LS,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 40V QFN3333N-...
PSMN3R8-30LL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V QFN3333N-...
PSMN023-80LS,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 80V 34A QFN33...
PSMN008-75P,127 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 75V 75A TO220...
PSMN035-150P,127 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 150V 50A SOT7...
PSMN006-20K,518 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 20V 32A 8-SOI...
PSMN070-200P,127 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 200V 35A TO22...
PSMN9R0-30YL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V 61A LFPAK...
PSMN050-80PS,127 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 80V 22A TO220...
PSMN005-55B,118 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 55V 75A D2PAK...
PSMN005-30K,518 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 30V 20A SOT96...
PSMN038-100K,518 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 100V SOT96-1N...
PSMN165-200K,518 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 200V 2.9A SOT...
PSMN003-30P,127 Nexperia USA... 0.0 $ 1000 MOSFET N-CH 30V 75A TO220...
PSMN013-30LL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V QFN3333N-...
PSMN014-60LS,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 60V QFN3333N-...
PSMN017-30LL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH QFN3333N-Chan...
PSMN035-100LS,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH QFN3333N-Chan...
PSMN3R5-30LL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V QFN3333N-...
PSMN5R8-30LL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V QFN3333N-...
PSMN1R9-25YLC,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 25V 100A LFPA...
PSMN011-30YL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V 51A LFPAK...
PSMN5R9-30YL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V 78A LFPAK...
PSMN8R0-30YL,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 30V 62A LFPAK...
PSMN7R5-25YLC,115 NXP USA Inc 0.0 $ 1000 MOSFET N-CH 25V 56A LL LF...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics