Allicdata Part #: | 1727-4661-ND |
Manufacturer Part#: |
PSMN035-150P,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 150V 50A SOT78 |
More Detail: | N-Channel 150V 50A (Tc) 250W (Tc) Through Hole TO-... |
DataSheet: | PSMN035-150P,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4720pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 79nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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PSMN035-150P,127 Application Field and Working Principle
A PSMN035-150P,127 is a type of Field Effect Transistor (FET) which is used to control power in applications such as in power amplifiers, inverters, digital switching circuits, low impedance loads and so on. It is also known as a single depletion-mode MOSFET and is composed of four terminals: gate (G), drain (D), source (S) and bulk (or body, B).
Working Principle
The PSMN035-150P,127 FET works by using the effect of capacitive coupling between its gate and drain terminals. By varying the voltage at the gate terminal of the FET, the electric field between it and the drain terminal adjusts, changing the channel resistance and resulting in a change in the current from source to drain. This is how the gate terminal acts as an electronic switch for the device, controlling the amount of current that is allowed to flow through the device.
The electrical resistance of the channel between the gate and the drain is directly proportional to the voltage on the gate terminal, and this can be used to control the amount of current that flows in the drain-source region of the transistor. When the gate voltage is increased, the electric field between it and the drain terminal also increases, resulting in higher channel resistance and less current flowing. Conversely, when the gate voltage is decreased, the electric field between it and the drain terminal decreases, resulting in lower channel resistance and more current flowing.
Application Field
The PSMN035-150P,127 MOSFET has a wide variety of applications including motor control and power electronics. This device is especially suitable for use in power amplifiers, inverters, and digital switching circuits because of its features such as low conductance, low gate threshold voltage, low leakage current, and enhanced performance. Additionally, the MOSFET can be used in inductive, capacitive, and resistive loads, making it a very versatile device for a wide range of applications.
The PSMN035-150P,127 FET is also commonly used in consumer electronics such as laptops and medical devices. In medical applications, the FET is used as an electronic switch to control the flow of current in devices such as pacemakers, imaging devices, and heart monitors. In laptops and other portable devices, the FET is used as a low impedance load in power supply circuits to prevent overloading of the system.
The PSMN035-150P,127 FET also has applications in the automotive industry, due to its low power consumption, small size, and low switching time. It is used in many automotive applications such as engine control systems, instrument clusters, and even ABS braking systems.
Conclusion
In conclusion, the PSMN035-150P, 127 is a single depletion-mode MOSFET which is composed of four terminals: gate, drain, source and bulk. It is an important device as it has a wide variety of applications, from medical to automotive. Its low channel resistance and low leakage current allows it to be used in low impedance loads, as well as its ability to help prevent system overloads with its small size and low switching time. Therefore, this type of FET is highly sought-after due to its features and its wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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