PSMN3R9-25MLC,115 Discrete Semiconductor Products |
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| Allicdata Part #: | 1727-7142-2-ND |
| Manufacturer Part#: |
PSMN3R9-25MLC,115 |
| Price: | $ 0.20 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 25V 70A LFPAK33 |
| More Detail: | N-Channel 25V 70A (Tc) 69W (Tc) Surface Mount LFPA... |
| DataSheet: |  PSMN3R9-25MLC,115 Datasheet/PDF |
| Quantity: | 1000 |
| 1500 +: | $ 0.17574 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 25V |
| Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 4.15 mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 21.5nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1524pF @ 12.5V |
| FET Feature: | -- |
| Power Dissipation (Max): | 69W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | LFPAK33 |
| Package / Case: | SOT-1210, 8-LFPAK33 (5-Lead) |
Description
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PSMN3R9-25MLC,115 transistors are a type of field-effect transistor (FET) also referred to as a metal-oxide-semiconductor field-effect transistor (MOSFET). As their name suggests, they are made of a metal gate, an oxide gate insulator, and a semiconductor substrate, usually silicon. The metal gate is where the electrical current is applied, and the oxide insulator electrically isolates the metal gate from the semiconductor substrate.FETs are used in a wide range of applications including radio-frequency amplifiers, modulation/demodulation circuit, digital logic circuits, analog switches, as well as other power switching applications. For these applications, FETs offer a number of advantages over bipolar transistors, such as lower power consumption, faster switching speeds, smaller form factor, and higher noise immunity.FETs can be further divided into two categories - Junction Field Effect Transistor (JFET) and Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). JFETs are simpler in operation than MOSFETs and are commonly used as switches, amplifiers, and low-noise detectors. However, JFETs are limited by relatively low voltage levels, temperature sensitivity, and variation with respect to operating parameters.MOSFETs, on the other hand, are more versatile and offer a much wider range of operating parameters. These devices are widely used in switching, audio and video amplifying, and power management applications such as DC to DC converters. As compared to BJTs, MOSFETs have significantly higher switching speeds, better input and output characteristics, and lower power consumption.PSMN3R9-25MLC,115 are MOSFETs that offer a number of advantages over other transistors. This specific type of transistor offers low on-state resistance, high speed switching, high circuit density and low thermal resistance in a small package. They also offer a wide operating temperature range and are well-suited for high-frequency applications. Additionally, their wide range of features makes them well-suited for high power applications.The two main parameters that affect the PSMN3R9-25MLC,115 FETs performance are the available drain current, and the maximum drain-to-source voltage. The drain current is proportional to the width of the channel between the drain and source terminals, so the width of the channel affects the maximum current that can be passed though the device. The maximum drain-to-source voltage, on the other hand, affects the maximum voltage that can be applied between the drain and source terminals.In terms of working principle, this type of FET operates by generating a field effect in the channel between the drain and source. This field effect is created by the application of a voltage to the gate terminal. This voltage induces a current flow by moving charges or “electrons” along the channel. When the drain-to-source voltage becomes greater than a certain threshold voltage, the FET is said to be partially conducting, which causes an additional current flow to occur. The higher the drain-to-source voltage, the higher the current flow, or current gain.In conclusion, the PSMN3R9-25MLC,115 transistor is a MOSFET (metal-oxide-semiconductor field-effect transistor) which offers a number of advantages over other transistors. It offers low on-state resistance, high speed switching, high circuit density, low thermal resistance, and wide operating temperature range. These features make it ideal for high-frequency and high-power applications. Additionally, its working principle is based on generating a field effect in the channel between the drain and source, which is affected by the width of the channel and the drain-to-source voltage.
The specific data is subject to PDF, and the above content is for reference
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