PSMN5R0-30YL,115

Vgs(th) (Max) @ Id:	2.15V @ 1mA
Package / Case:	SC-100, SOT-669, 4-LFPAK
Supplier Device Package:	LFPAK56, Power-SO8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	61W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1760pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	91A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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PSMN5R0-30YL,115 Application Field And Working Principle";?>The PSMN5R0-30YL,115 is a n-channel enhancement mode vertical DMOS transistor. It is part of a line of similar transistors designed and manufactured by Infineon Technologies.This transistor is commonly used in high-power switching applications. It has a maximum drain current of 115 A and a breakdown voltage of 67 V. Its maximum drain-source voltage is 40 V, and it has a maximum power dissipation at 25 °C of 420 W. These transistors are optimal for applications requiring high current and high frequency, such as motor control, home appliances, lighting and lighting controls, audio power amplifiers, power supplies, and industrial automation.The working principle of a PSMN5R0-30YL,115 is similar to that of other field-effect transistors (FETs). This device is composed of a source, a drain, and a gate. The source and drain are electrodes that are located on either side of the channel. The gate is an electric field that is applied between the source and the drain. When a positive electric potential (V GS ) is applied to the gate of the transistor, the electric field attracts electrons in the channel, forming a conducting channel between the source and the drain. When the electric field is removed, the electrons in the channel recombine, causing the transistor to turn off.The PSMN5R0-30YL,115 is composed of a vertical DMOS structure that incorporates a number of components, including a n-type layer, a gate oxide layer, a gate electrode, and a highly doped source/drain region. The n-type layer is composed of a single n-channel surrounded by a lateral p-type well. The p-well serves to enhance the device’s breakdown voltage.The gate oxide layer is a dielectric insulator that forms the electric field between the source and drain when a voltage is applied to the gate electrode. The gate electrode is composed of a metallic layer that contacts the gate oxide layer and the source/drain region. The highly doped source/drain region serves to reduce the resistance between the source and drain.When a voltage is applied to the gate of the PSMN5R0-30YL,115, the current flows between the source and the drain, causing the transistor to turn on. If the electric field is removed, the electrons in the channel recombine and the transistor turns off. This is the basic working principle of PSMN5R0-30YL,115 transistors.The PSMN5R0-30YL,115 offers numerous advantages over other FETs and transistors, such as low series resistance, low gate charge, and low output capacitance. Additionally, these transistors have an extended maximum temperature range of -55 to +150°C and an improved power package design to ensure reliable operation.In short, the PSMN5R0-30YL,115 is an enhancement mode vertical DMOS transistor that is commonly used in high-power switching applications. It features a high drain current of 115 A, high breakdown voltage, low on-resistance, and low gate charge. This makes it an ideal choice for applications requiring extremely high current or power.

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