PSMN3R9-60PSQ

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The PSMN3R9-60PSQ is a single N-channel silicon FREDFET (Field-Effect Transistor), specifically a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). These transistors are commonly used as an electrical switch in various applications. This article will discuss the applications and working principles of the PSMN3R9-60PSQ.

The PSMN3R9-60PSQ is designed for both linear and switching applications. It is mainly utilized for power management, wireless ground boot circuits, battery powered equipment and AC power switches. As a power MOSFET, the component is intended for use in high-speed switching applications with a high amount of leakage current. The device’s primary limitation is its voltage range, as it is not suitable for use in systems that require higher operating voltages.

The PSMN3R9-60PSQ utilizes a silicon-based silicon-oxide gate dielectric, which is highly reliable due to its low tolerance to temperature changes and excellent electrical insulation. The device features a maximum drain-source voltage of 20V and a maximum drain-source current of 17A. The device’s low Ron (on-resistance) ensures high switching efficiency and minimal losses.

The PSMN3R9-60PSQ is comprised of two layers of N-channel MOS-type underlying silicon with a gate cap on the top. The silicon layer is etched in order to form a grid of channels. When a drain-source voltage is applied to the device, the capacitance at the grid forms an electric field, which allows electrons to cross the channel. This enables the device to be used as an electrical switch, since it can be turned on or off. The channel formed allows for low resistance and high current.

The PSMN3R9-60PSQ\'s maximum junction temperature is rated at 175 degrees Celsius. The device is designed for a wide operating temperature range, from -55 to +175 degrees Celsius. The device is also rated for a maximum continuous drain-source voltage of 20V and a maximum drain-source current of 17A.

The PSMN3R9-60PSQ has an RDSon (drain-source on-resistance) of 44 mOhms, making it very efficient at turning off and on. This low RDSon allows for the device to withstand higher current levels than other MOSFETs, allowing it to be used in systems requiring higher energy efficiency.

The PSMN3R9-60PSQ is a useful device for use in a variety of applications, such as power management, AC power switches, DC-to-DC converters, and wireless powering systems. Its low RDSon and high voltage capabilities mean that the device can handle high levels of current without damage. The device is also perfect for use in systems that require high efficiency and reliability because of its silicon-oxide gate dielectric, low tolerance to temperature changes, and high voltage range.

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