Allicdata Part #: | 568-5307-2-ND |
Manufacturer Part#: |
PSMN013-30LL,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V QFN3333 |
More Detail: | N-Channel 30V 21A (Tc) 41W (Tc) Surface Mount 8-DF... |
DataSheet: | PSMN013-30LL,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-DFN3333 (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 41W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 768pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12.2nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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:The PSMN013-30LL,115 is a class of powerful and versatile transistors, as they belong to the field-effect transistors (FETs) and metal-oxide semiconductor FETs (MOSFETs) family. As part of this family, it is a single transistor - meaning that it consists of one component instead of several - and is thus used for specific purposes that simpler transistors may not be able to fulfill entirely.
FETs are transistors that have an electric field component that controls the current flow. As opposed to directly controlling the current flow through gate voltage or current, FETs control the current through an insulated field, thus allowing very low power devices with very small gate capacitance. MOSFETs are further a subset of FETs, as they use metal electrodes and an insulated oxide to a silicon wafer, thus allowing the current-carrying genes to be insulated from the control gate - enhancing the FETs characteristics.
The PSMN013-30LL,115 transistor is an N-channel enhancement mode MOSFET, meaning that it is a type of field-effect transistor that utilizes an insulated gate field to control the conductivity between its source and its drain. It belongs to the 30V class, meaning that its drain-source voltage can go up to 30V, whereas its maximum current drain-source resistance is 0.13.13 ohms.
The PSMNNMOSFET013-30LL, 115 transistor is used for a number of advantageous purposes. It is most commonly used for power conversion and motor drive applications. Specifically, it provides advanced system control and performance, as it can be used to accurately control its own switching characteristics (the ratio of on-to-off time). In addition, its enhanced durability and efficiency can enable advanced monitoring of process variables and motor parameters.
The PSMN013-30LL,115 transistor works by utilizing the field effect. A voltage applied on the gate controls the current between the source terminal and the drain terminal. When the voltage applied on the gate is increased, the transistor becomes less resistive, thus allowing a greater current through it. Conversely, when the voltage applied on the gate is decreased, the transistor becomes more resistive, thus limiting the current.
To better understand the working principle of the PSMN013-30LL, 115, let’s consider an example. Let’s say that we want to control a motor with a basic motor driver circuit. We can draw a motor driver circuit with the PSMN013-30LL,115 transistor, which consists of the transistor, the motor, and a power supply. In order for the PSMN013-30LL transistor to act as a motor driver, a voltage must be applied to its gate terminal. This voltage increases or decreases the current flowing through the transistor, thus controlling the power supply to the motor. As the voltage applied to the gate is increased, the motor driver acts as an ON switch and the motor starts running. Conversely, when the voltage applied to the gate is decreased, the motor driver acts as an OFF switch and the motor stops running.
In conclusion, the PSMN013-30LL,115 transistor is a powerful and versatile single transistor of the FETs and MOSFETs family, suitable for power conversion and motor drive applications. Its main function is to control its own switching characteristics, due to its enhanced durability and efficiency, thanks to the field-effect it utilizes. It works by changing the current flow through the source terminal and the drain terminal, as the voltage applied to the gate increases or decreases. This makes it an ideal transistor for advanced system control and performance.
The specific data is subject to PDF, and the above content is for reference
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