![PSMN017-60YS,115 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 1727-4626-2-ND |
Manufacturer Part#: |
PSMN017-60YS,115 |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 44A LFPAK |
More Detail: | N-Channel 60V 44A (Tc) 74W (Tc) Surface Mount LFPA... |
DataSheet: | ![]() |
Quantity: | 1000 |
1500 +: | $ 0.18756 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1172pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 15.7 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PSMN017-60YS,115 is a type of transistor from a specific family of field-effect transistors, namely Metal Oxide Semiconductor Field-Effect Transistors, often abbreviated MOSFETs. It is a type of single-channel, small-footprint transistor, often employed as a switching or amplification service in industrial and consumer electronic circuits.
MOSFETs are a type of semiconductor that works through the movement of electrons and their changes in state, based on applied voltage. This type of transistor has a higher voltage standing than a complementary metal oxide semiconductor (CMOS), which makes it suitable for applications where a low voltage standing is insufficient.
When the source and drain of a MOSFET is connected to a power source, electrons become mobile and can then transition from source to drain, as it is based on an electrostatic field created by an applied voltage (the Gate voltage). When such a field is created, it modulates the flow of the electrons from source to drain, thereby producing either a higher or lower voltage state compared to the power source.
The PSMN017-60YS,115 is specifically designed for industrial and consumer applications. Its small-footprint design makes it particularly suited for applications where space is limited, such as in mobile phones and other handheld electronics. It is also suitable for high-frequency control, switching, and signal amplification.
The MOSFET transistors like the PSMN017-60YS,115 are designed to operate in either the Enhancement or Depletion mode, depending on the signal state. While in the Depletion mode— that is, when the signal is a low voltage— the electrons are given free passage between the source and drain. In Enhancement mode, or when the applied voltage is high, the voltage field inhibits the current flow and reduces the output voltage.
The PSMN017-60YS,115 is also suitable for power efficiency applications, as it can PWM- and heat-controlled voltage regulators. These type of regulators are often found in power supplies, motor controls and intelligent lighting applications.
The PSMN017-60YS,115 can be used in circuits with very high input impedances, so that high-frequency signals can be sent without losing power. This makes it suitable for circuits requiring very high performance and reliable operation. In these types of circuits, the source and drain terminals are isolated from the gate voltage to minimize the effects of noise and other disruptions.
These circuit transistors are also designed to minimize power dissipation. The design of the PSMN017-60YS,115 in particular makes it suitable for low power circuit designs, as it can reduce power consumption to a small fraction of the total power used within the system.
In summary, the PSMN017-60YS,115 is a type of MOSFET transistor designed for small-footprint, industrial and consumer applications. Its small-footprint design, low voltage standing, and suitability for various applications make it a particularly sought-after type of transistors, often found in high-performance, power-efficient circuits.