PSMN2R6-60PSQ Allicdata Electronics
Allicdata Part #:

1727-1057-ND

Manufacturer Part#:

PSMN2R6-60PSQ

Price: $ 2.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 60V 150A TO-220
More Detail: N-Channel 60V 150A (Tc) 326W (Tc) Through Hole TO-...
DataSheet: PSMN2R6-60PSQ datasheetPSMN2R6-60PSQ Datasheet/PDF
Quantity: 5059
1 +: $ 1.94040
50 +: $ 1.56366
100 +: $ 1.40729
500 +: $ 1.09458
1000 +: $ 0.90693
Stock 5059Can Ship Immediately
$ 2.14
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 326W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7629pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The PSMN2R6-60PSQ is an insulated gate type MOSFET transistor typically used for applications such as motor control, power supply regulation, and switch mode power supplies. The low on-resistance enables high efficiency, and the low gate charge reduces conduction loss.

In power control, the PSMN2R6-60PSQ helps to reduce power consumption and heat dissipation in the system, helps to minimize switching noise, and helps to make system design easier as the PSMN2R6-60PSQ is available in a wide range of packages and ratings. In power supply regulation, it provides high stability, is applicable over a wide range of conditions, and helps to simplify system layout.

The PSMN2R6-60PSQ is a single MOSFET device, which means the transistor is composed of one layer of semiconductor material, in this case silicon, containing N-type and P-type doping regions. This doping of the silicon acts to create two junctions of different types, allowing for the transfer of electrical current. The P-type region is referred to as the source, and the N-type region is referred to as the drain. A control terminal, referred to as the gate, is positioned between the source and drain.

The operation of the PSMN2R6-60PSQ is based on the electrostatic field generated by the gate-channel junction. When the gate-channel junction is positively charged, it creates an electric field that repells the majority carriers in the channel, stopping them from entering the gate-channel junction. This effectively switches off the current flow between the source and the drain. Conversely, when the gate-channel junction is negatively charged, the majority carriers can enter the gate-channel junction, allowing for the flow of current between the source and drain.

The PSMN2R6-60PSQ is also able to switch on and off extremely rapidly, allowing for fast switching rates. This makes it ideal for applications such as motor control and power supply regulation, where the device needs to switch off and on quickly and reliably. Additionally, the gate charge, or amount of charge needed to switch the transistor on and off, is extremely low in this device, enabling high efficiency due to a reduction in switching losses from the device.

In conclusion, the PSMN2R6-60PSQ is a single MOSFET device typically used for applications in motor control, power supply regulation, and switch mode power supplies. Its low on-resistance, low gate charge, and fast switching rate make it an ideal choice for these applications.

The specific data is subject to PDF, and the above content is for reference

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