Allicdata Part #: | 1727-2592-2-ND |
Manufacturer Part#: |
PSMN019-100YLX |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V LFPAK56 |
More Detail: | N-Channel 100V 56A (Tc) 167W (Tc) Surface Mount LF... |
DataSheet: | PSMN019-100YLX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.26105 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 167W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5085pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 72.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PSMN019-100YLX is a type of single N-Channel Enhancement Mode Field-Effect Transistor (FET), which is a type of semiconductor device used to amplify and switch electronic signals. The PSMN019-100YLX is fabricated with Fairchild\'s proprietary advanced UltraFET process technology. This type of FET is designed for use in low-noise, highly-integrated applications such as advanced wireless communication such as LTE, Wi-Fi, Zigbee, and more. It can be used for both linear and switching applications.
The function of the PSMN019-100YLX is to amplify and switch electronic signals. Every FET is comprised of an input terminal (the gate), an output terminal (the drain), and a control terminal (the source). A voltage applied to the gate controls the current flow between the drain and the source, making FETs useful for amplifying digital logic signals. When the gate voltage rises above the threshold voltage of the FET, the drain-source channel will conduct, whereas if the gate voltage gets lower than the threshold, the FET will operate in the linear mode. This is known as the enhancement mode and is the mode of operation in which the PSMN019-100YLX operates. It is also a high-performance device with low capacitance, low noise, and fast switching speeds.
The PSMN019-100YLX is fabricated using Fairchild’s proprietary advanced UltraFET process technology, which is an advanced CMOS process. It allows for high-performance FETs with higher breakdown voltages, higher current capability, and extremely low on-resistance. The small size of these transistors is also an added benefit, giving designers the ability to make space-efficient designs. Thanks to the extremely low on-resistance, the PSMN019-100YLX has low power dissipation and reduced heat, allowing designers to create higher efficiency designs.
The PSMN019-100YLX is most commonly used in low-noise, highly-integrated applications such as advanced wireless communication such as LTE, Wi-Fi, Zigbee, and more. It is also used for linear and switching applications, such as audio amplifiers and radio transmitters. Furthermore, it is also used in various industrial, automotive, and medical applications.
In conclusion, the PSMN019-100YLX is a type of single N-Channel Enhancement Mode Field-Effect Transistor (FET) designed to amplify, switch, and control electrical signals. It is fabricated with Fairchild’s proprietary advanced UltraFET process technology, allowing for high-performance FETs with low capacitance, low noise, and fast switching speeds. It is mainly used in communications applications, as well as audio amplifiers and radio transmitters, and various industrial, automotive, and medical applications.
The specific data is subject to PDF, and the above content is for reference
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