PSMN2R5-60PLQ

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PSMN2R5-60PLQ is a high performance, large current driving N-Channel MOSFET, made from a high-voltage integrated silicon technology. It features an ultra-low on-resistance of 0.41 Ω, low gate charge of 7.3nC and a very low input/output junction capacitance of 7.3pF. This unique combination makes it especially suitable for powering hot-swap, power management and motor driving applications, such as HVAC, automotive and computers.

The PSMN2R5-60PLQ is the perfect choice for applications requiring high switching speeds, high efficiency and long operating life. Its low on-resistance provides lower conduction losses, while its well-characterized low input/output junction capacitance ensures high-frequency switching performance. The integrated over-temperature protection also ensures reliable operation and high reliability.

Working Principle:

The PSMN2R5-60PLQ is a n-channel enhancement-mode vertical power MOSFET. It works on the principle of “source follower”. When a negative gate voltage is applied to the N-channel MOSFET, the voltage on the source terminal decreases. This in turn increases the current through the MOSFET, thus turning it on. When the gate voltage is removed, the MOSFET is turned off.

The PSMN2R5-60PLQ also features an advanced protection system, which detects any over-temperature conditions, reduces the performance threshold, and provides over-temperature protection. This helps ensure reliable operation, even in case of short-term overload or excessive temperature.

Application:

The PSMN2R5-60PLQ is widely used in hot-swap circuits, such as those found in telecom, automotive, server and industrial control applications. Due to its low gate charge, the input/output junction capacitance, and the over-temperature protection, the PSMN2R5-60PLQ is also widely used for AC motor drives, traction inverters and solar inverters. In addition, the device is widely used in HVAC applications and solar power systems.

Due to its very low on-resistance of 0.41 ohms and low gate charge, and its very low input/output junction capacitance, the PSMN2R5-60PLQ enables lower conduction losses and very high-frequency switching performance. The integrated over-temperature protection makes it suitable for a wide range of applications, such as HVAC, automotive, server and industrial control applications, hot-swap circuits, motor drives, traction inverters and solar inverters.

Conclusion:

The PSMN2R5-60PLQ is a high performance, large current driving N-Channel MOSFET made with an advanced integrated silicon technology. Its low on-resistance provides lower conduction losses, while its well-characterized low input/output junction capacitance ensures high-frequency switching performance. The integrated over-temperature protection also ensures reliable operation and high reliability. Due to its low gate charge and its very low input/output junction capacitance, the device is particularly suitable for powering hot-swap, power management and motor driving applications, such as HVAC, automotive and computers. With its excellent performance and reliability, the PSMN2R5-60PLQ is a great choice for applications requiring high switching speeds, high efficiency and long operating life.

The specific data is subject to PDF, and the above content is for reference