| Allicdata Part #: | PTFA041501HLV1R250-ND |
| Manufacturer Part#: |
PTFA041501HL V1 R250 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IC FET RF LDMOS 150W PG-64248-2 |
| More Detail: | RF Mosfet LDMOS 28V 900mA 470MHz 21dB 150W PG-6424... |
| DataSheet: |  PTFA041501HL V1 R250 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 470MHz |
| Gain: | 21dB |
| Voltage - Test: | 28V |
| Current Rating: | 1µA |
| Noise Figure: | -- |
| Current - Test: | 900mA |
| Power - Output: | 150W |
| Voltage - Rated: | 65V |
| Package / Case: | 2-Flatpack, Fin Leads, Flanged |
| Supplier Device Package: | PG-64248-2 |
| Base Part Number: | PTFA041501 |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PTFA041501HL V1 R250 is a power transistor manufactured by ROHM. It is part of the Transistors - FETs, MOSFETs - RF category and is designed to meet a variety of different needs. It is a low input impedance, wide bandwidth, small size, and high power amplifier designed to operate in the range of 300 to 1000 MHz, enabling it to be used in a wide range of applications.The PTFA041501HL V1 R250 is made from gallium arsenide and operates as a depletion-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). Its operating voltage range is from 3.5 to 7 volts, and it has a maximum drain current of 4.5 A. At the same time, it provides 0.95 dB gain at a frequency of 500 MHz. As for the input impedance, it has an impedance of 500 ohms, which is relatively high, allowing for a higher voltage gain. When used as an amplifier, the device is typically configured with an input signal and an output load, with the two components connected to the drain and source, respectively. The drain and source of the MOSFET are also connected to the gate, completing the circuit and applying the necessary bias to the device. With an input current applied to the gate, the current is then multiplied in the drain circuit and subsequently becoming a higher current at the output load. The output load is typically connected to an antenna or loudspeaker, and the device amplifies the signal passing through it.Finally, the PTFA041501HL V1 R250 is a power transistor with very versatile application potentials. It can be used in almost all types of RF applications, such as amplifiers, digital and analog circuits, oscillators, and switches, among others. It is ideal for use in mobile communication systems, automotive systems, consumer electronic products, and in a variety of other applications that require a wide bandwidth and excellent RF capabilities.
The specific data is subject to PDF, and the above content is for reference
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