 
                            | Allicdata Part #: | PTFA091201FV4XWSA1TR-ND | 
| Manufacturer Part#: | PTFA091201FV4XWSA1 | 
| Price: | $ 0.00 | 
| Product Category: | Discrete Semiconductor Products | 
| Manufacturer: | Infineon Technologies | 
| Short Description: | IC FET RF LDMOS 120W H-37248-2 | 
| More Detail: | RF Mosfet LDMOS 28V 750mA 960MHz 19dB 110W H-37248... | 
| DataSheet: |  PTFA091201FV4XWSA1 Datasheet/PDF | 
| Quantity: | 1000 | 
| 1 +: | 0.00000 | 
| Series: | -- | 
| Packaging: | Tape & Reel (TR) | 
| Part Status: | Obsolete | 
| Transistor Type: | LDMOS | 
| Frequency: | 960MHz | 
| Gain: | 19dB | 
| Voltage - Test: | 28V | 
| Current Rating: | 10µA | 
| Noise Figure: | -- | 
| Current - Test: | 750mA | 
| Power - Output: | 110W | 
| Voltage - Rated: | 65V | 
| Package / Case: | 2-Flatpack, Fin Leads, Flanged | 
| Supplier Device Package: | H-37248-2 | 
| Base Part Number: | PTFA091201 | 
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.The PTFA091201FV4XWSA1 is a unique device offering a variety of applications and working principles. It is a Field Effect Transistor (FET), MOSFETs and RF device, which utilizes the dependence of electric current on an externally applied electric field. This device was developed by Panasonic Electric Works, and is designed to control the flow of current through a solid state material.
The PTFA091201FV4XWSA1 serves many functions, with the most common applications being amplifier, mixers, power amplifiers, radio receivers, and multi-channel FM transceiver modules. The basic working principle of this FET device is based on the characteristics of a gate capacitance, which is determined by a small battery. This battery is installed on a thin film of semiconductor material, which is usually aninsulator such as glass or polymer.
The operation of the PTFA091201FV4XWSA1 device can be divided into two major parts: the gate voltage control, and the gate current control. The gate voltage control determines the amount of electrons that are injected onto or removed from the base material. This mechanism is used to control the current flow through the device. The gate current control is dependent on the size of the gate opening which can be adjusted to make the output voltage more or less controlled.
The PTFA091201FV4XWSA1 can operate in many modes, depending on the specific application requirements. In switching mode, the device is typically used to switch ON or OFF various signals, whereas in linear mode, the device will typically supply a fixed output voltage level. The high frequency response of the device is excellent, making it suitable for use in high speed analog or digital applications.
The device can also be used in low noise applications, such as in low noise amplifiers and in broadband amplifiers. In these applications, the device is used to amplify very low level signals without introducing any unwanted noise into the signal chain. The device is also useful for designing low power devices, as it can operate at both low and high frequencies.
The RF performance of the PTFA091201FV4XWSA1 is also outstanding, as it offers a low noise figure, a wide frequency range, and a low distortion level. This device is well suited for use in a variety of RF designs, such as in radio receivers, satellite receivers, and RF measurements.
The PTFA091201FV4XWSA1 is a versatile device, suitable for a wide range of applications across a variety of industries. It is used in consumer electronics, communications, industrial and medical applications, among other areas. With its excellent performance, the device is an ideal choice for any design engineer.
The specific data is subject to PDF, and the above content is for reference
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