| Allicdata Part #: | PTFA212001EV4R250XTMA1TR-ND |
| Manufacturer Part#: |
PTFA212001EV4R250XTMA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | FET RF 65V 2.14GHZ H-36260-2 |
| More Detail: | RF Mosfet LDMOS 30V 1.6A 2.14GHz 15.8dB 50W H-3626... |
| DataSheet: | PTFA212001EV4R250XTMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 2.14GHz |
| Gain: | 15.8dB |
| Voltage - Test: | 30V |
| Current Rating: | 10µA |
| Noise Figure: | -- |
| Current - Test: | 1.6A |
| Power - Output: | 50W |
| Voltage - Rated: | 65V |
| Package / Case: | 2-Flatpack, Fin Leads |
| Supplier Device Package: | H-36260-2 |
| Base Part Number: | PTFA212001 |
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The PTFA212001EV4R250XTMA1 device is a type of FET, or field effect transistor, and more specifically, a type of radio frequency FET. As FETs are widely used as amplifiers, particularly in radio frequencies, this makes them ideal for radio communication, including radio broadcasts and mobile networks, as well as other applications that require high frequency amplification.
FETs generally work differently from other types of transistors in that the resistance of the channel, which determines the operating frequency, is controlled by a voltage and current that is applied to the gate terminal. This voltage is known as the gate voltage and is used to regulate the flow of current through the device and to decrease the resistance of the channel in the FET. As a result, FETs are able to provide high frequency amplification, which makes them an ideal choice for radio frequency applications.
For the PTFA212001EV4R250XTMA1 device, this means that it is able to provide a high level of performance and an excellent frequency response. This makes it well-suited for use in a wide range of radio frequency applications, including radio broadcast and mobile networks. It can also be used in other high frequency applications, including medical imaging and tests, where accuracy and precision is vital.
In addition to its ability to provide high frequency amplification, the PTFA212001EV4R250XTMA1 device also provides a wide range of power, which makes it suitable for a variety of radio communications. This device offers a high input impedance with a low noise figure and a low power dissipation. Furthermore, the device has a high efficiency, which makes it well-suited for use in applications requiring high frequencies and high power.
The PTFA212001EV4R250XTMA1 device is an excellent choice for radio frequency applications and provides superior performance. With its high power and frequency response, as well as its wide range of power, this device is highly suitable for a wide range of applications, including radio broadcast and mobile networks, as well as other high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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| PTFA091201GL V1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 120W PG-6... |
| PTFA091201HL V1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 120W PG-6... |
| PTFA142401FLV4XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 240W H-34... |
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| PTFA192401FV4R250XTMA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 240W H-37... |
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| PTFA260851E V1 R250 | Infineon Tec... | 0.0 $ | 1000 | FET RF 65V 2.68GHZ H-3024... |
| PTFA210701EV4R250XTMA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 70W H-362... |
| PTFA211801EV5XWSA1 | Infineon Tec... | 0.0 $ | 1000 | FET RF 65V 2.14GHZ H36260... |
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| PTFA212001EV4XWSA1 | Infineon Tec... | 0.0 $ | 1000 | FET RF 65V 2.14GHZ H-3626... |
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PTFA212001EV4R250XTMA1 Datasheet/PDF