PTFA180701FV4R250XTMA1 Allicdata Electronics
Allicdata Part #:

PTFA180701FV4R250XTMA1TR-ND

Manufacturer Part#:

PTFA180701FV4R250XTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IC FET RF LDMOS 70W H-37265-2
More Detail: RF Mosfet LDMOS 28V 550mA 1.84GHz 16.5dB 60W H-372...
DataSheet: PTFA180701FV4R250XTMA1 datasheetPTFA180701FV4R250XTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.84GHz
Gain: 16.5dB
Voltage - Test: 28V
Current Rating: 10µA
Noise Figure: --
Current - Test: 550mA
Power - Output: 60W
Voltage - Rated: 65V
Package / Case: 2-Flatpack, Fin Leads, Flanged
Supplier Device Package: H-37265-2
Base Part Number: PTFA180701
Description

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The PTFA180701FV4R250XTMA1 is a MOSFET transistor commonly used in RF applications. It is a FET type transistor, meaning it uses the flow of electrons through a field effect region to amplify or switch signals. In particular, the PTFA180701FV4R250XTMA1 can be used for power amplification, as well as for switching of signals at frequencies up to 250MHz. Due to its relatively low cost and ease of implementation, the PTFA180701FV4R250XTMA1 is a popular choice for many radio frequency applications.

As the name implies, the main component of a MOSFET transistor is a metal-oxide semiconductor field effect region (MOSFET). This is a special type of field effect transistor (FET) which uses a three-dimensional region of oxide-insulated semiconductor material in between source and drain contacts to control the flow of electrons. This field effect region is insulated from the rest of the transistor using a thin oxide layer and is referred to as the “gate”. By controlling the voltage applied to the gate, the electron density in the channel region can be controlled, allowing for amplification or switching of signals.

The PTFA180701FV4R250XTMA1 is a N-Channel Enhancement Mode (NMOS) device. This means that it has an n-type channel between the source and drain contacts where electrons are free to move. The current gain, and therefore the gain of the entire device, is dependent on the electrons being able to move freely through the channel region. As the gate voltage is increased, more electrons are allowed to move through the channel and the current gain increases, thus allowing more current to flow and the voltage gain of the device increases.

The PTFA180701FV4R250XTMA1 is designed for high frequency operation, with a maximum frequency of 250MHz. This is due to the MOSFET’s fast switching speeds and low on-state resistance. The PTFA180701FV4R250XTMA1 can also be used for switching and signal rectification, as it has a low gate capacitance and gate to drain capacitance. This allows for quick and efficient switching, making it an attractive choice for a variety of digital applications.

The PTFA180701FV4R250XTMA1 is a versatile device which is suitable for a variety of applications in the RF field. It can be used for power amplifiers, signal switching, digital signal rectification, and other high frequency applications. As it has a relatively low cost and relatively low on-state resistance, the PTFA180701FV4R250XTMA1 is an attractive choice for many radio frequency applications.

The specific data is subject to PDF, and the above content is for reference

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