| Allicdata Part #: | PTFA070601EV4R250XTMA1TR-ND |
| Manufacturer Part#: |
PTFA070601EV4R250XTMA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | FET RF LDMOS 60W H36265-2 |
| More Detail: | RF Mosfet LDMOS 28V 600mA 760MHz 19.5dB 60W H-3626... |
| DataSheet: | PTFA070601EV4R250XTMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 760MHz |
| Gain: | 19.5dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 600mA |
| Power - Output: | 60W |
| Voltage - Rated: | 65V |
| Package / Case: | H-36265-2 |
| Supplier Device Package: | H-36265-2 |
| Base Part Number: | PTFA070601 |
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PTFA070601EV4R250XTMA1 is an RF MOSFET transistor that is most commonly used in various applications, such as amplifiers and switches. The wide range of MOSFET applications make it an ideal choice for a wide variety of electronic designs.
The PTFA070601EV4R250XTMA1 is a high frequency transistor that can be used in a wide range of applications, from audio amplifiers to low noise amplifiers and RF switches. The device is designed with an internal gate-source voltage of up to 50 volts and a high current drain capability.
The device utilizes source-drain and gate-source junctions to form a three-terminal field-effect transistor (FET). In an FET, the source is connected to the gate and drain, while the gate is connected to the source and drain. The MOSFET transistor also has a dielectric insulation layer between the source and drain, which provides a gate control voltage.
When a voltage is applied to the gate terminal, it affects the threshold voltage, or Vth, at the source and the drain to the gate. This voltage, in turn, determines the amount of current that can flow between the source and the drain. The amount of current flowing between the source and the drain is known as the drain current or the drain-source current.
The PTFA070601EV4R250XTMA1 offers an excellent high frequency performance with low power consumption. The device also offers a high switching speed, which makes it suitable for high speed switching applications. The MOSFET is an ideal choice for digital circuitry and systems where low power dissipation and fast switching speeds are required.
The on-resistance of the device is relatively low at 0.01 ohms and the power rating is high at up to 150 watts, making it ideal for many applications. The device is also designed with a thermal dissipation rating of 1.2 Watts per°C, meaning it won’t overheat when used at high temperatures.
In addition, the device has a voltage rating of up to 300 volts, so it can be used with both AC and DC devices in power supplies. The device’s wide range of voltage ratings make it ideal for high frequency and power applications.
The PTFA070601EV4R250XTMA1 is a versatile device that is suitable for a wide range of applications. It is a versatile MOSFET device that can provide high current density and low power consumption, making it an ideal choice for many applications. It is a great choice for high frequency, low power, and high voltage applications.
The specific data is subject to PDF, and the above content is for reference
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PTFA070601EV4R250XTMA1 Datasheet/PDF