Allicdata Part #: | PTFA041501HLV1-ND |
Manufacturer Part#: |
PTFA041501HL V1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IC FET RF LDMOS 150W PG-64248-2 |
More Detail: | RF Mosfet LDMOS 28V 900mA 470MHz 21dB 150W PG-6424... |
DataSheet: | PTFA041501HL V1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 470MHz |
Gain: | 21dB |
Voltage - Test: | 28V |
Current Rating: | 1µA |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 150W |
Voltage - Rated: | 65V |
Package / Case: | 2-Flatpack, Fin Leads, Flanged |
Supplier Device Package: | PG-64248-2 |
Base Part Number: | PTFA041501 |
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PTFA041501HL V1, also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), is a type of transistor used in RF systems. It is a highly efficient transistor that has been designed to allow signals to pass through it with minimal signal loss. The V1 version of this transistor is a high power, low on-resistance MOSFET.
MOSFETs are a type of FET, or Field Effect Transistor, which are used as switches in RF, or radio frequency, systems. The MOSFET works by using voltage to control the flow of electrical current between two terminals, the drain and the source. When a voltage is applied to the gate of the MOSFET, a transverse electric field is created, which modulates the current flow from the drain to the source of the transistor. This modulated current is then sent on to other components in the RF circuit, such as amplifiers, antennas, or other transistors.
In addition to its RF applications, the PTFA041501HL V1 can be used in other fields as well. It is used in audio amplifiers, voltage-controlled oscillators (VCOs), and PWM (Pulse Width Modulated) circuits. It can also be used in power amplifiers in consumer electronics, such as speakers, televisions, and computers. In addition, the V1 version of this transistor is very efficient at switching high currents and voltage, making it ideal for use in high power applications such as those found in the motor control systems and power amplifiers.
The PTFA041501HL V1 is designed to have very low on-resistance, meaning it is able to switch high currents with minimal signal loss. This makes it an ideal choice for RF circuits, as it is able to pass signals through with minimal signal loss. Additionally, the V1 version of this transistor also has a high power rating, making it suitable for use in power amplifiers. In addition, the V1 version of this transistor is very efficient in terms of power consumption, making it an energy-efficient solution for many applications.
In conclusion, the PTFA041501HL V1 is a highly efficient MOSFET transistor designed for use in RF systems. It has very low on-resistance, high power rating, and is designed to pass signals through with minimal Signal loss. It is also suitable for use in other applications, such as audio amplifiers, VCOs, and PWM circuits, and is an energy-efficient solution for many power applications. The PTFA041501HL V1 is an ideal choice for RF systems due to its high efficiency and low signal loss.
The specific data is subject to PDF, and the above content is for reference
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