Allicdata Part #: | PTFA080551FV1-ND |
Manufacturer Part#: |
PTFA080551F V1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IC FET RF LDMOS 55W H-37265-2 |
More Detail: | RF Mosfet LDMOS 28V 600mA 960MHz 18.5dB 55W H-3726... |
DataSheet: | PTFA080551F V1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | LDMOS |
Frequency: | 960MHz |
Gain: | 18.5dB |
Voltage - Test: | 28V |
Current Rating: | 10µA |
Noise Figure: | -- |
Current - Test: | 600mA |
Power - Output: | 55W |
Voltage - Rated: | 65V |
Package / Case: | 2-Flatpack, Fin Leads, Flanged |
Supplier Device Package: | H-37265-2 |
Base Part Number: | PTFA080551 |
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PTFA080551F V1 is a transistor widely used in radio frequency (RF) applications due to its high performance. It is a type of field-effect transistor (FET) made with metal-oxide-semiconductor (MOSFET) technology having a very low on-resistance. This makes it ideal for applications that require high-speed switching, high-gain amplifying, and low input capacitance. It operates at frequencies of up to 8 GHz.
ThePTFA080551F V1 is composed of a MOSFET channel connected to a gate, an drain, and a source terminal. It is constructed in such a way that the gate controls the conduction through the MOSFET channel. As the voltage applied to the gate is increased, the conduction through the MOSFET channel increases. Conversely, decreasing the applied gate voltage reduces the conduction through the MOSFET channel.
This MOSFETs\' gate input is protected from electrical overstress (EOS) by an integrated Schottky diode that limits the input voltage to a safe limit. The built-in diode also eliminates the need for an external protection diode, thus saving space and reducing costs. Theintegrated diode also enhances the speed and efficiency of the FET significantly.
ThePTFA080551F V1 is designed for use in RF applications due to its low input capacitance and high gain. The low input capacitance provides a very low insertion loss and high-frequency end loss. The high gain is due to its low on-resistance which helps reduce power consumption in both the transmitter and receiver. In addition, the very low parasitic inductance and capacitance enables fast and accurate data transmission. ThePTFA080551F V1 also offers very low thermal noise which helps reduce interference and improve the system\'s overall performance.
In addition to radio frequency applications, thePTFA080551F V1 is also suitable for use in RFID and cellular telephone applications due to its low power requirements and fast switching speeds. It can also be used in low-speed digital applications such as analog-to-digital conversion, digital-to-analog conversion, and power switching.
In conclusion, thePTFA080551F V1 is an excellent choice for a variety of applications due to its low on-resistance, low input capacitance, and high gain. It is also extremely reliable, making it suitable for use in a variety of different applications. By leveraging its high performance, thePTFA080551F V1 can help improve system efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
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