| Allicdata Part #: | PTFA081501E1V4XWSA1-ND |
| Manufacturer Part#: |
PTFA081501E1V4XWSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IC RF FET LDMOS H-36248-2 |
| More Detail: | RF Mosfet |
| DataSheet: | PTFA081501E1V4XWSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | * |
| Part Status: | Obsolete |
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.The PTFA081501E1V4XWSA1 is a type of transistor known as a Field Effect Transistor, or FET. It is one of several types of FETs and it is commonly used in radio frequency (rf) applications. In this article, we will discuss the application field and working principle of the PTFA081501E1V4XWSA1.A FET is a current-controlled device, meaning it is able to amplify or switch an electrical signal by changing the amount of current flowing through it. Unlike a regular transistor, it does not require a separate base connection to control current flow. The conductivity of the FET is determined by the voltage applied to its gate (a terminal or connection that controls the flow of current).In terms of application fields, the PTFA081501E1V4XWSA1 is frequently used as an RF amplifier in electronic devices, especially consumer electronics. It amplifies radio signals by converting electrical energy into radio waves, so that we can hear or view them. The PTFA081501E1V4XWSA1 can also be used to switch signals on and off. It is versatile enough to be used in a wide range of applications, including but not limited to Amplifiers, Antenna Tuners, Data Modems, Satellite Receivers, Television Sets, Remote Controllers, and even Mobile Phones.Now let’s discuss the working principle of the PTFA081501E1V4XWSA1. As previously mentioned, its conductivity is determined by the voltage applied to its gate. When voltage is applied to the gate, it allows current to pass through the device and this allows the signal to be amplified or switched on or off. It is important to note that the PTFA081501E1V4XWSA1 requires voltage to be applied to both its drain and source terminals.When using the PTFA081501E1V4XWSA1, there are a few things to keep in mind to ensure optimal performance. First, it needs to be operated in low-noise environments since its conductivity can be affected by the presence of noise. Second, it is important to use appropriate voltages and currents when powering the device. Doing so will ensure that it runs at its optimal power level and that its performance is not affected by excessive or insufficient levels of power.In conclusion, the PTFA081501E1V4XWSA1 is an RF field effect transistor (FET) commonly used in a wide range of applications, especially in consumer electronics. Its conductivity is determined by the voltage applied to its gate and it requires voltage to be applied to both its drain and source terminals in order to function properly. It is important to note that the PTFA081501E1V4XWSA1 needs to be operated in a low-noise environment and it should be powered with the correct voltage and current levels for optimal performance.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| PTFA180701FV4R0XTMA1 | Infineon Tec... | 0.0 $ | 1000 | RF MOSFET LDMOS 28V H-372... |
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| PTFA210601F V4 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 60W H-372... |
| PTFA212001EV4R0XTMA1 | Infineon Tec... | 0.0 $ | 1000 | RF MOSFET LDMOS 30V H-362... |
| PTFA072401FL-V5-R0 | Cree/Wolfspe... | 77.21 $ | 1000 | RF MOSFET LDMOS 30V H-342... |
| PTFA082201F V1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 220W H-37... |
| PTFA181001HL V1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 100W PG-6... |
| PTFA092213ELV4R250XTMA2 | Infineon Tec... | 0.0 $ | 1000 | IC RF FET LDMOS H-33288-6... |
| PTFA181001HL V1 R250 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 100W PG-6... |
| PTFA210601F V4 R250 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 60W H-372... |
| PTFA212401F V4 R250 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 240W H-37... |
| PTFA211801F V4 R250 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 180W H-37... |
| PTFA212401E V4 R250 | Infineon Tec... | 0.0 $ | 1000 | FET RF 65V 2.14GHZ H-3626... |
| PTFA260851E V1 | Infineon Tec... | 0.0 $ | 1000 | FET RF 65V 2.68GHZ H-3024... |
| PTFA181001E V4 T500 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOSRF Mosfet ... |
| PTFA041501HL V1 R250 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 150W PG-6... |
| PTFA041501GL V1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 150W PG-6... |
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| PTFA080551F-V4-R250 | Cree/Wolfspe... | -- | 1000 | IC FET RF LDMOS 55W H-372... |
| PTFA092213ELV4T400XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC RF FET LDMOS H-33288-6... |
| PTFA181001EV4R250XTMA1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 100W H-36... |
| PTFA212001EV4R250XTMA1 | Infineon Tec... | 0.0 $ | 1000 | FET RF 65V 2.14GHZ H-3626... |
| PTFA081501F V1 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 150W H-31... |
| PTFA041501F-V4-R0 | Cree/Wolfspe... | 79.0 $ | 1000 | RF MOSFET LDMOS 28V H-372... |
| PTFA192001F V4 R250 | Infineon Tec... | 0.0 $ | 1000 | IC FET RF LDMOS 200W H-37... |
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| PTFA071701EV4R250XTMA1 | Infineon Tec... | 0.0 $ | 1000 | FET RF LDMOS 170W H36248-... |
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| PTFA212001F1V4XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC RF POWER TRANSISTORRF ... |
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PTFA081501E1V4XWSA1 Datasheet/PDF