Allicdata Part #: | PTVA093002TCV1R250XUMA1-ND |
Manufacturer Part#: |
PTVA093002TCV1R250XUMA1 |
Price: | $ 59.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IC AMP RF LDMOS |
More Detail: | RF Mosfet |
DataSheet: | PTVA093002TCV1R250XUMA1 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 54.17680 |
Series: | * |
Part Status: | Active |
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PTVA093002TCV1R250XUMA1 is a kind of transistor, more specifically a field effect transistor (FET). This type of transistor is also referred to as a metal oxide semiconductor field effect transistor (MOSFET). It is an RF transistor (or radio frequency transistor) and is typically used in low-noise amplifier applications. By way of introduction, it is important to note that transistors are electronic components that contain two or more terminals and can act as a switch, amplifier, or rectifier. FETs are one type of transistor and are often used in digital signal processing and radio frequency (RF) applications. FETs operate by controlling their output signal according to the input signal applied to their gate terminal.
PTVA093002TCV1R250XUMA1 transistors are particularly known for their low noise characteristics, which makes them popular among engineers working in radio frequency (RF) fields. In additio, they are noted for their excellent durability even under extreme environmental conditions, as well as their capability to operate at high frequencies of up to 1GHz. This type of transistor is also thermally stable, allowing it to be used in a wide range of temperatures ranging from -45 to 110 degrees Celsius. Additionally, the PTVA093002TCV1R250XUMA1 is a JFET (junction field-effect transistor) and features a current gain of up to 140, making it even more suitable for RF applications.
When it comes to the working principle of the PTVA093002TCV1R250XUMA1, this type of transistor works by controlling the output current of the Gate terminal. In a FET, the Gate connection acts as a control terminal and is typically connected to between Source and Drain. When a negative voltage is applied to the Gate terminal, the voltage at the Source terminal increases and decreases when a positive voltage is applied. In this way, the Gate terminal can be used to control the current going through the Source and Drain connections.
PTVA093002TCV1R250XUMA1 transistors are mainly used in low noise amplifier circuits. These circuits can be used in a variety of low-power radio frequency (RF) applications such as satellite TV, cell phones, radio transceivers, and Wi-Fi. This transistor has the capability to amplify a signal in multiple stages, and to filter out any noise from the signal, making it particularly suitable for RF applications. This type of transistor is also very rugged and is capable of withstanding high temperatures and adverse environmental conditions.
In conclusion, PTVA093002TCV1R250XUMA1 transistors are a type of FET transistor commonly used in low-noise amplifier applications. By applying a negative voltage to the Gate terminal, a current can be controlled through the Source and Drain terminals. This type of transistor is known for its low noise characteristics, robustness, and thermal stability, which makes it very suitable for RF applications.
The specific data is subject to PDF, and the above content is for reference
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