PTVA127002EVV1XWSA1

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The PTVA127002EVV1XWSA1 transistor is a high-frequency MOS field effect transistor (MOSFET). It is commonly used in radio frequency (RF) circuits and is designed to handle relatively high frequencies. This device is designed to operate with high gain while still providing good linearity. The PTVA127002EVV1XWSA1 is an enhancement-mode MOSFET with a gate oxide thickness of 400 angstroms for a VGS of 20 volts. The maximum drain current is 3 amps and the maximum pulse drain current is 5 amps.

The PTVA127002EVV1XWSA1 has a low thermal resistance of 8.8´C/W. It is designed to perform reliably at frequencies of up to 5 GHz. It is a high power device, with a maximum drain source voltage of 110 volts, a maximum drain-source on-state resistance of 3.8Ω, and a maximum drain-source current of 6.5 amps. The device also has low gate charge and low Miller capture coefficient to allow for better performance.

The application fields of the PTVA127002EVV1XWSA1 include high frequency amplifiers, linear amplifiers, switch mode power supplies, and power over Ethernet (PoE). The device is also suitable for use in microwave circuits, such as satellite systems, radar systems, and mobile communication. The low gate charge and low Miller capture coefficient make the device desirable for biasing applications, such as in oscillator circuits.

The working principle of the PTVA127002EVV1XWSA1 is based on the transistor effect. The device acts as a voltage-controlled device, where the current is determined by the applied voltage. The voltage applied to the gate affects the flow of current from source to drain. When a positive voltage is applied to the gate, the flow of current from source to drain is enhanced. This is called the enhancement mode. When the gate voltage is set to zero, the device does not conduct and is said to be in the cutoff mode.

The PTVA127002EVV1XWSA1 is a high-frequency MOSFET that is suitable for use in high-frequency applications such as RF, microwave, and PoE. It has a low thermal resistance, high power rating, and low gate charge. The device is designed to operate with high gain while still providing good linearity. It is suitable for use in high power applications such as switch mode power supplies and linear amplifiers, and is also suitable for use in biasing applications such as oscillator circuits.

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