PTVA120251EA-V1-R250

PTVA120251EA-V1-R250 is a power transistor. It is more commonly referred to as an RF MOSFET. This transistor’s intended application field is that of remote control devices. It is designed to provide switching and amplification capabilities in a variety of wireless controls such as wireless doorbells and intercom devices. The fundamental working principle of the PTVA120251EA-V1-R250 is a form of metallic-oxide-semiconductor (MOS) technology. In a basic sense, the MOSFET works by controlling the flow of electrons or electric current through an insulated barrier between two terminals. This is achieved by applying an electric field to the insulated barrier, which then weakens the insulation between the two terminals and allows for current to flow. In the case of the PTVA120251EA-V1-R250, the insulated barrier is created by a thin layer of silicon dioxide, which is placed between an N-type region and a P-type region. This layer insulates the gate, which is used to control the flow of current through the N-type region and the P-type region. This control is achieved by changing the electric potential at the gate, which in turn impacts the electric field at the insulated barrier. When the positive voltage is applied to the gate of the PTVA120251EA-V1-R250, the electric field is strengthened and electron flow is enabled, allowing the transistor to conduct current. When the voltage is removed, the field weakens and the transistor ceases to conduct. This particular MOSFET features an on-resistance of 250 ohms and is capable of switching up to 3A in a 350 volt environment. Its operating temperature range is from -55 to +175 degrees Celsius. Additionally, it features an operating frequency range of up to 500 MHz, making it suitable for use in a wide range of radio frequency applications. In summary, the PTVA120251EA-V1-R250 is a MOSFET transistor designed for use in both wireless and radio frequency applications. It features an on-resistance of 250 ohms and is capable of switching up to 3A in a 350 volt environment. Its operating temperature range is from -55 to +175 degrees Celsius with an operating frequency range of up to 500 MHz. It utilizes metallic-oxide-semiconductor technology to provide reliable and efficient switching and amplification capabilities.

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