PTVA035002EVV1XWSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PTVA035002EVV1XWSA1 device is a type of advanced power MOSFET designed for use in the RF (Radio Frequency) domain. This device is particularly suitable for use in applications where a high level of efficiency is required, including wireless communication applications, as well as industrial and consumer electronics.

The PTVA035002EVV1XWSA1 is based on a depletion mode vertical double etched-gate MACH technology with a three terminal power MOSFET. The depletion mode of operation ensures that the device is capable of operating under diverse supply and load conditions without the need for gate bias voltage. This eliminates the need for an external bias source and makes the device compatible with a wide range of applications.

The device features a unique construction that minimizes the feed forward capacitance (beta), thereby lowering the total power consumption. The device also features an extremely low reverse transfer capacitance. This makes it suitable for use in high frequency, high power applications.

The PTVA035002EVV1XWSA1 is designed for use in a variety of RF applications including RF power amplifiers, RF signal generation and modulation, RF switching applications, RF power block designs, and RF signal filtering. This device is especially suitable for applications requiring extreme power densities, and high efficiency.

The working principle of the PTVA035002EVV1XWSA1 power MOSFET is based on the ability of the device to operate on a depletion mode. This is accomplished by applying a gate voltage of a certain magnitude to the gate electrode. This gate voltage creates an electric field that counteracts the charge carriers, which then act to reduce the current.

The device features a two-layer gate structure that consists of a floating body layer and a source layer. The source layer is connected to the source terminal, while the floating body layer is used to control the body charge. This charge control enables the device to operate without a bias voltage and makes the device versatile enough to accommodate a variety of supply and load conditions.

The PTVA035002EVV1XWSA1 was designed to have very low On/Off capacitance. This reduces the capacitive current between the gate and the source-drain region, resulting in a better dynamic response. Furthermore, the low on-state resistance minimizes power loss during switching, making it an ideal device for RF applications.

The device also features a “body diode” for protection in case of an inductive overvoltage. The term “body diode” refers to the diode-like behavior of the device when short circuited from the gate to the source. The body diode protects the device from generating too much current, which could cause significant damage.

The PTVA035002EVV1XWSA1 is an ideal device for use in RF applications that require high efficiency and power density. The device operates without a bias voltage and its low On/Off capacitance and low on-state resistance reduces power loss, making it highly efficient. Furthermore, the inbuilt body diode provides additional protection from inductive overvoltage.

The specific data is subject to PDF, and the above content is for reference