Allicdata Part #: | PTVA101K02EVV1XWSA1-ND |
Manufacturer Part#: |
PTVA101K02EVV1XWSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IC AMP RF LDMOS |
More Detail: | RF Mosfet |
DataSheet: | PTVA101K02EVV1XWSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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PTVA101K02EVV1XWSA1 is a type of Field Effect Transistor (FET). As its name suggests, a field effect transistor is a type of transistor that uses an electric field to control the flow of electrons through it. A FET is an electronic switch which is used to control the flow of electrons in a circuit.
A FET consists of two semiconductor terminals, the source and the drain. The source is the terminal from which electrons enter the FET, while the drain is the terminal from which electrons are ejected. In between the source and the drain is a thin gate oxide layer which acts as a barrier between the two terminals. This layer is used to control the flow of electrons in the FET.
The PTVA101K02EVV1XWSA1 is a RF FET, which means it is designed to work in the radio frequency range (normally 10MHz to 1GHz). RF FETs are used in communication systems to amplify or switch RF signals. They are also used in other applications such as low noise amplifiers and local oscillators.
RF FETs have a few advantages over other types of FETs; namely, they can handle higher frequencies, they are smaller in size, and they tend to be more efficient than other types of FETs. The PTVA101K02EVV1XWSA1 is designed to work at very low power levels, which makes it ideal for applications such as low-power radio transmitters and receivers.
The PTVA101K02EVV1XWSA1 works on the principle of Field Effect. An electric field is applied to the gate electrodes which causes the source and drain terminals to be charged up. This in turn causes current to flow across the FET, controlled by how much current is being drawn from the source. By controlling the gate voltage, the amount of current that is allowed to flow across the FET can be controlled.
The PTVA101K02EVV1XWSA1 is well suited for applications such as low-noise amplifiers, low-power radio transmitters and receivers, and RF signal switching. It is also suitable for other applications where small size and low power are desired. As a result, this device is very versatile and can be used for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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