PTVA120252MT-V1-R1K

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PTVA120252MT-V1-R1K is a dual-channel, Modular MOSFET RF power amplifier module. It is designed for maximum efficiency for a wide range of applications in the high frequency range. This transistor module is well-suited for use in the development of various military and space applications, as well as microwave radio communication and commercial radio frequency devices.

The inner core of the module is built in a small size and provides a high power density. The wideband gain of the PTVA120252MT-V1-R1K allows for high-performance amplification of signals up to 8GHz without loss in power efficiency. The low noise figure of the module makes it perfect for applications where a low noise level is essential for reliable data communication.

The PTVA120252MT-V1-R1K also features high RF power linearity and low adjacent-channel power leakage. The module is designed to meet a wide range of demanding requirements in wireless and wireless data communications, RF power amplifiers, cellular base stations, VOIP, microwave radio communication and cable access networks.

At the core of PTVA120252MT-V1-R1K’s working principle is the modulation of MOSFETs. In this transistor, two transistors are used as radio carriers instead of just one. This ensures a higher gain, improved linearity, and greater efficiency compared to conventional amplifiers. The output power of this module is constant at a 25dB gain regardless of the frequency.

The PTVA120252MT-V1-R1K offers a wide range of applications in the fields of military and aerospace, commercial radio frequency devices, cellular base stations, microwave radio communication, and VOIP networks. It is used in many modern telecommunications and radar applications. Thanks to its high power linearity and low noise figure, it is also ideal for power amplifiers and other applications requiring reliable data communication.

The PTVA120252MT-V1-R1K is a reliable, high-performance and high-efficiency dual-channel transistor module. With its wideband gain, low noise figure and high power linearity, this module is an ideal choice for a wide range of demanding requirements. It is specifically designed to provide superior performance in complex RF applications, and its small size enables it to be integrated into a wide range of lower-cost communications systems. Thanks to its numerous benefits, this transistor module is a great choice for many different applications.

The specific data is subject to PDF, and the above content is for reference