Allicdata Part #: | PTVA030121EA-V1-R0-ND |
Manufacturer Part#: |
PTVA030121EA-V1-R0 |
Price: | $ 35.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | IC AMP RF LDMOS H-36265-2 |
More Detail: | RF Mosfet LDMOS 50V 50mA 390MHz ~ 450MHz 25dB 12W ... |
DataSheet: | PTVA030121EA-V1-R0 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 32.55730 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 390MHz ~ 450MHz |
Gain: | 25dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 50mA |
Power - Output: | 12W |
Voltage - Rated: | 105V |
Package / Case: | H-36265-2 |
Supplier Device Package: | H-36265-2 |
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:The PTVA030121EA-V1-R0 is a type of field effect transistor, commonly referred to as an FET. It is classified as an RF (radio frequency) MOSFET, one of the most widely used types of FETs. This type of transistor is typically used in applications where small size and low power dissipation are important considerations.
FETs are three-terminal devices that use a voltage applied to a gate to control the flow of electrons through the device. FETs usually offer higher input impedance and lower noise levels than their bipolar counterparts, and they can be used in a variety of different applications. FETs are also relatively easy to design and are sometimes preferred for more complex applications.
The PTVA030121EA-V1-R0 is a low power RF MOSFET with a breakdown voltage of 60V and a maximum drain-source current of 1.5A. It is a high-frequency device, with a frequency range of up to 200MHz. It is also available in a variety of package styles, allowing for flexibility in design. In addition, the device is well-suited for use in high-temperature environments, with an operating temperature range of -40 to 150°C.
The working principle of this FET is relatively simple. An input voltage is applied to the gate, which causes an electric field to be created within the device. This electric field helps to control the flow of electrons between the drain and the source terminals. The number of electrons flowing between the two terminals is determined by the strength of the electric field and the size of the gate-source junction.
When used in an RF circuit, the PTVA030121EA-V1-R0 can be used to amplify signals, reduce noise, and switch signals on and off. It is also suitable for use in other applications, such as power supply regulation, data switching, and audio amplifiers. The device is well-suited for use in both high-frequency and low-frequency circuits, and its low power dissipation makes it a viable alternative to other types of FETs.
Overall, the PTVA030121EA-V1-R0 is an ideal solution for a variety of RF circuit applications. With its wide frequency range, small size, and low power dissipation, it can provide excellent performance in applications requiring the highest levels of accuracy and reliability. The device is also relatively easy to use and can be integrated into existing designs with minimal effort.
The specific data is subject to PDF, and the above content is for reference
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