Allicdata Part #: | PTVA035002EV-V1-R0-ND |
Manufacturer Part#: |
PTVA035002EV-V1-R0 |
Price: | $ 179.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | IC AMP RF LDMOS H-36275-4 |
More Detail: | RF Mosfet LDMOS 50V 500mA 390MHz ~ 450MHz 18dB 500... |
DataSheet: | PTVA035002EV-V1-R0 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 163.06000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 390MHz ~ 450MHz |
Gain: | 18dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 500W |
Voltage - Rated: | 105V |
Package / Case: | H-36275-4 |
Supplier Device Package: | H-36275-4 |
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The PTVA035002EV-V1-R0 is a great example of a radio frequency field effect transistor (RF FET). This special type of transistor is used in various high-frequency applications such as satellite/terrestrial television and radio broadcasting, as well as high-speed data transmission.
A transistor is an electronic semiconductor device that has three or more electrical terminals. These may be used to regulate current or voltage in one or more analog circuits or digital circuits. Generally, transistors are used as switching or amplifying devices.
The PTVA035002EV-V1-R0 is a type of junction field effect transistor (JFET). This is a three-terminal device with an insulated gate. The gate is made of a material that is slightly less conductive than the source and drain. This device\'s conduction is determined by an electric field that passes between the gate and the source terminal.
The PTVA035002EV-V1-R0 is specifically designed for radio frequency (RF) applications. RF FETs are typically used for increased gain, higher switching speed, and greater control than standard FETs. The device is specially designed for operation in the 10 MHz to 10 GHz range, making it perfect for high-frequency applications such as radio/television broadcasting and radar.
The PTVA035002EV-V1-R0 provides excellent performance characteristics in both high-power and low-noise applications. Its drain-source voltage rating is 12V, and it has an exceptional cutoff frequency (fT) of 2 GHz. This device also has a low-noise figure of just 1 dB. Additionally, its high maximum output power makes it suitable for many high-power applications.
As far as the working principle of the PTVA035002EV-V1-R0 is concerned, it works by using an electric field to regulate the flow of current between the source and drain. When a positive gate voltage is applied to the gate terminal, the electric field is increased and the gate region acts like a diode. This causes a shift in the drain-source current. The amount of this shift is dictated by the gate voltage, which gives the user the ability to control the drain-source current.
The PTVA035002EV-V1-R0 is a great choice for various high-frequency applications due to its exceptional performance characteristics. It is especially suited for applications such as satellite/terrestrial television and radio broadcasting, as well as high-speed data transmission. It also can be used for high-power applications, due to its high maximum output power.
The specific data is subject to PDF, and the above content is for reference
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