PTVA104501EHV1XWSA1

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The PTVA104501EHV1XWSA1 is a vertical JFET RF transistor designed for use in applications such as VHF, UHF and L-band test and measurement equipment, satellite and spacecraft telemetry, radar, cellular base station power amplifiers and radio transceivers.

The PTVA104501EHV1XWSA1 is developed by Stackpole Electronics, Inc. and is housed in a 16-pins ceramic flatpack which measures 7.25 x 10.8 mm. It has an ESCC P11 compliance rating. It is a vertical N-channel JFET with low distortion and low noise, offering high power and low drain voltage capability. It can handle up to 100 watts peak power over frequency range of 10 kHz to 1 GHz and offers exceptional gain flatness, low noise and low distortion. It offers stable operation, enhanced reliability and low junction temperature of less than 185 degrees Celsius.

The PTVA104501EHV1XWSA1 features a drain-source breakdown voltage of 45 V and a maximum drain current of 15 A. The device also features high gain, high power and low noise figure making it suitable for applications in different types of high frequency circuits. The device also offers low thermal resistance, rugged construction and excellent thermal stability which ensures reliable operation over a wide range of operating conditions.

The basic operating principle of the PTVA104501EHV1XWSA1 is similar to any other JFET device. When a negative gate-source voltage is applied, it results in a pinching off of the drain and source terminals, which limits current flow between these terminals. This process is called depletion mode operation. The amount of pinch-off and current flow is controlled by the gate-source voltage, which can be increased or decreased to adjust the current flow. The gate-source voltage can also be used to adjust the gain of the device.

The PTVA104501EHV1XWSA1 is an excellent choice for use in high frequency circuits that require high power, low noise and low distortion. Its low thermal resistance, rugged construction and excellent thermal stability ensure reliable operation over a wide range of operating conditions. The device is also RoHS compliant and meets various quality standards, making it suitable for various high frequency applications.

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